Nanoscale compositional analysis of wurtzite BAlN thin film using atom probe tomography
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2021-12-07
Type
ArticleAuthors
Sarker, JithTran, Tinh Binh

AlQatari, Feras S.

Liao, Che-Hao

Li, Xiaohang

Mazumder, Baishakhi

KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionMaterial Science and Engineering Program
Physical Science and Engineering (PSE) Division
Electrical Engineering Program
Date
2020-12-07Embargo End Date
2021-12-07Submitted Date
2020-08-31Permanent link to this record
http://hdl.handle.net/10754/666304
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In this work, the local atomic level composition of BAlN films with 20% B was investigated using atom probe tomography. Dislocations and elemental clustering were confirmed along which Al atoms tend to segregate. The presence of local compositional heterogeneities (dislocations and small clusters) and impurities is related to the variation of local alloy stoichiometry of the BAlN films. The roughness and interface abruptness of BAlN/AlN were investigated, and a few nm of B and Al composition gradient in BAlN adjacent to the interface was observed. The nanoscale compositional analysis reported here will be crucial for developing BAlN films with a high B content and larger thickness for future high power electronics and optical applications.Citation
Sarker, J., Tran, T. B., AlQatari, F., Liao, C.-H., Li, X., & Mazumder, B. (2020). Nanoscale compositional analysis of wurtzite BAlN thin film using atom probe tomography. Applied Physics Letters, 117(23), 232103. doi:10.1063/5.0027861Publisher
AIP PublishingJournal
Applied Physics LettersAdditional Links
http://aip.scitation.org/doi/10.1063/5.0027861ae974a485f413a2113503eed53cd6c53
10.1063/5.0027861