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dc.contributor.authorScaccabarozzi, Alberto D.
dc.contributor.authorScuratti, Francesca
dc.contributor.authorBarker, Alex J.
dc.contributor.authorBasu, Aniruddha
dc.contributor.authorPaterson, Alexandra
dc.contributor.authorFei, Zhuping
dc.contributor.authorSolomeshch, Olga
dc.contributor.authorPetrozza, Annamaria
dc.contributor.authorTessler, Nir
dc.contributor.authorHeeney, Martin
dc.contributor.authorAnthopoulos, Thomas D.
dc.contributor.authorCaironi, Mario
dc.date.accessioned2020-12-07T06:53:29Z
dc.date.available2020-12-07T06:53:29Z
dc.date.submitted2020-05-26
dc.identifier.citationScaccabarozzi, A. D., Scuratti, F., Barker, A. J., Basu, A., Paterson, A. F., Fei, Z., … Caironi, M. (2020). Understanding Charge Transport in High-Mobility p- Doped Multicomponent Blend Organic Transistors. Advanced Electronic Materials, 6(10), 2000539. doi:10.1002/aelm.202000539
dc.identifier.issn2199-160X
dc.identifier.doi10.1002/aelm.202000539
dc.identifier.urihttp://hdl.handle.net/10754/666291
dc.description.abstractThe use of ternary systems comprising polymers, small molecules, and molecular dopants represents a promising approach for the development of high-mobility, solution-processed organic transistors. However, the current understanding of the charge transport in these complex systems, and particularly the role of molecular doping, is rather limited. Here, the role of the individual components in enhancing hole transport in the best-performing ternary blend systems comprising the small molecule 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT), the conjugated polymer indacenodithiophene-alt-benzothiadiazole (C16IDT-BT), and the molecular p-type dopant (C60F48) is investigated. Temperature-dependent charge transport measurements reveal different charge transport regimes depending on the blend composition, crossing from a thermally activated to a band-like behavior. Using the charge-modulation spectroscopy technique, it is shown that in the case of the pristine blend, holes relax onto the conjugated polymer phase where shallow traps dominate carrier transport. Addition of a small amount of C60F48 deactivates those shallow traps allowing for a higher degree of hole delocalization within the highly crystalline C8-BTBT domains located on the upper surface of the blend film. Such synergistic effect of a highly ordered C8-BTBT phase, a polymer bridging grain boundaries, and p-doping results in the exceptionally high hole mobilities and band-like transport observed in this blend system.
dc.description.sponsorshipThis work was financially supported by the European Research Council (ERC) under the European Union's Horizon 2020 research and innovation program “HEROIC,” grant agreement 638059. This work was partially carried out at Polifab, the micro- and nanotechnology center of the Politecnico di Milano. GIWAXS experiments were performed at BL11 NCD-SWEET beamline at ALBA Synchrotron (Spain) with the collaboration of Dr. Eduardo Solano. T.D.A. is grateful to King Abdullah University of Science and Technology (KAUST) for financial support.
dc.publisherWiley
dc.relation.urlhttps://onlinelibrary.wiley.com/doi/10.1002/aelm.202000539
dc.rightsArchived with thanks to Advanced Electronic Materials
dc.titleUnderstanding Charge Transport in High-Mobility p-Doped Multicomponent Blend Organic Transistors
dc.typeArticle
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentMaterial Science and Engineering Program
dc.identifier.journalAdvanced Electronic Materials
dc.rights.embargodate2021-12-07
dc.eprint.versionPost-print
dc.contributor.institutionCenter for Nano Science and Technology@PoliMi, Istituto Italiano di Tecnologia, via Giovanni Pascoli 70/3, Milan, 20133, Italy
dc.contributor.institutionDepartment of Chemistry and Centre for Plastic Electronics, Imperial College London, South Kensington, London, SW7 2AZ, UK
dc.contributor.institutionSara and Moshe Zisapel Nano-Electronic Center, Department of Electrical Engineering, Technion—Israel Institute of Technology, Haifa, 3200, Israel
dc.identifier.volume6
dc.identifier.issue10
dc.identifier.pages2000539
kaust.personBasu, Aniruddha
kaust.personPaterson, Alexandra
kaust.personAnthopoulos, Thomas D.
dc.date.accepted2020-07-16
dc.identifier.eid2-s2.0-85090770948


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