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    Understanding Charge Transport in High-Mobility p-Doped Multicomponent Blend Organic Transistors

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    Type
    Article
    Authors
    Scaccabarozzi, Alberto D. cc
    Scuratti, Francesca
    Barker, Alex J.
    Basu, Aniruddha cc
    Paterson, Alexandra
    Fei, Zhuping
    Solomeshch, Olga
    Petrozza, Annamaria
    Tessler, Nir
    Heeney, Martin
    Anthopoulos, Thomas D. cc
    Caironi, Mario cc
    KAUST Department
    KAUST Solar Center (KSC)
    Physical Science and Engineering (PSE) Division
    Material Science and Engineering Program
    Embargo End Date
    2021-12-07
    Submitted Date
    2020-05-26
    Permanent link to this record
    http://hdl.handle.net/10754/666291
    
    Metadata
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    Abstract
    The use of ternary systems comprising polymers, small molecules, and molecular dopants represents a promising approach for the development of high-mobility, solution-processed organic transistors. However, the current understanding of the charge transport in these complex systems, and particularly the role of molecular doping, is rather limited. Here, the role of the individual components in enhancing hole transport in the best-performing ternary blend systems comprising the small molecule 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT), the conjugated polymer indacenodithiophene-alt-benzothiadiazole (C16IDT-BT), and the molecular p-type dopant (C60F48) is investigated. Temperature-dependent charge transport measurements reveal different charge transport regimes depending on the blend composition, crossing from a thermally activated to a band-like behavior. Using the charge-modulation spectroscopy technique, it is shown that in the case of the pristine blend, holes relax onto the conjugated polymer phase where shallow traps dominate carrier transport. Addition of a small amount of C60F48 deactivates those shallow traps allowing for a higher degree of hole delocalization within the highly crystalline C8-BTBT domains located on the upper surface of the blend film. Such synergistic effect of a highly ordered C8-BTBT phase, a polymer bridging grain boundaries, and p-doping results in the exceptionally high hole mobilities and band-like transport observed in this blend system.
    Citation
    Scaccabarozzi, A. D., Scuratti, F., Barker, A. J., Basu, A., Paterson, A. F., Fei, Z., … Caironi, M. (2020). Understanding Charge Transport in High-Mobility p- Doped Multicomponent Blend Organic Transistors. Advanced Electronic Materials, 6(10), 2000539. doi:10.1002/aelm.202000539
    Sponsors
    This work was financially supported by the European Research Council (ERC) under the European Union's Horizon 2020 research and innovation program “HEROIC,” grant agreement 638059. This work was partially carried out at Polifab, the micro- and nanotechnology center of the Politecnico di Milano. GIWAXS experiments were performed at BL11 NCD-SWEET beamline at ALBA Synchrotron (Spain) with the collaboration of Dr. Eduardo Solano. T.D.A. is grateful to King Abdullah University of Science and Technology (KAUST) for financial support.
    Publisher
    Wiley
    Journal
    Advanced Electronic Materials
    DOI
    10.1002/aelm.202000539
    Additional Links
    https://onlinelibrary.wiley.com/doi/10.1002/aelm.202000539
    ae974a485f413a2113503eed53cd6c53
    10.1002/aelm.202000539
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program; KAUST Solar Center (KSC)

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