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    Epitaxial Growth of $β$-Ga$_2$O$_3$ Coated Wide Bandgap Semiconductor Tape for Flexible UV Photodetector

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    Type
    Preprint
    Authors
    Tang, Xiao
    Li, Kuang-Hui cc
    Zhao, Yue
    Sui, Yanxin
    Liang, Huili
    Liu, Zeng
    Liao, Che-Hao
    Mei, Zengxia
    Tang, Weihua
    Li, Xiaohang cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Material Science and Engineering Program
    Material Science and Engineering
    Physical Science and Engineering (PSE) Division
    Advanced Semiconductor Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
    Electrical Engineering Program
    KAUST Grant Number
    BAS/1/1664-01-01
    REP/1/3189-01-01
    URF/1/3437-01-01
    URF/1/3771-01-01
    Date
    2020-08-01
    Permanent link to this record
    http://hdl.handle.net/10754/666241
    
    Metadata
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    Abstract
    The epitaxial growth of technically-important $\beta$-Ga$_2$O$_3$ semiconductor thin films have not been realized on flexible substrates due to limitations by the high-temperature crystallization conditions and the lattice-matching requirements. In this report, for the first time single crystal $\beta$-Ga$_2$O$_3$(-201) thin films is epitaxially grown on the flexible CeO2 (001)-buffered hastelloy tape. The results indicate that CeO$_2$ (001) has a small bi-axial lattice mismatch with $\beta$-Ga$_2$O$_3$ (-201), thus inducing a simultaneous double-domain epitaxial growth. Flexible photodetectors are fabricated based on the epitaxial $\beta$-Ga$_2$O$_3$ coated tapes. Measurements show that the obtained photodetectors have a responsivity of 40 mA/W, with an on/off ratio reaching 1000 under 250 nm incident light and 5 V bias voltage. Such photoelectrical performance is already within the mainstream level of the $\beta$-Ga$_2$O$_3$ based photodetectors by using the conventional rigid single crystal substrates; and more importantly remained robust against more than 1000 cycles of bending tests. In addition, the epitaxy technique described in the report also paves the way for the fabrication of a wide range of flexible epitaxial film devices that utilize the materials with lattice parameters similar to $\beta$-Ga$_2$O$_3$, including GaN, AlN and SiC.
    Sponsors
    The authors would like to acknowledge the support of KAUST Baseline BAS/1/1664-01-01, KAUST Competitive Research Grant URF/1/3437-01-01, URF/1/3771-01-01, GCC Research Council REP/1/3189-01-01, and National Natural Science Foundation of China (61874139). The authors would also like to acknowledge the support from Ulrich Buttner in nanofabrication core lab, KAUST and Laurentiu Braic in thin film deposition core lab, KAUST for device fabrication and PLD maintenance, respectively.
    Publisher
    arXiv
    arXiv
    2008.00172
    Additional Links
    https://arxiv.org/pdf/2008.00172
    Collections
    Preprints; Physical Science and Engineering (PSE) Division; Electrical Engineering Program; Material Science and Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

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