Show simple item record

dc.contributor.authorGu, Wen
dc.contributor.authorLu, Yi
dc.contributor.authorLin, Rongyu
dc.contributor.authorGuo, Wenzhe
dc.contributor.authorZhang, Zi-hui
dc.contributor.authorRyou, Jae-Hyun
dc.contributor.authorYan, Jianchang
dc.contributor.authorWang, Junxi
dc.contributor.authorLi, Jinmin
dc.contributor.authorLi, Xiaohang
dc.date.accessioned2021-01-27T10:53:50Z
dc.date.available2020-12-02T11:43:50Z
dc.date.available2021-01-27T10:53:50Z
dc.date.issued2021-01-22
dc.date.submitted2020-10-10
dc.identifier.citationGu, W., Lu, Y., Lin, R., Guo, W., Zhang, Z.-H., Ryou, J.-H., … Li, X. (2021). BAlN for III-nitride UV light-emitting diodes: undoped electron blocking layer. Journal of Physics D: Applied Physics. doi:10.1088/1361-6463/abdefc
dc.identifier.issn0022-3727
dc.identifier.issn1361-6463
dc.identifier.doi10.1088/1361-6463/abdefc
dc.identifier.urihttp://hdl.handle.net/10754/666240
dc.description.abstractThe undoped BAlN electron-blocking layer (EBL) is investigated to replace the conventional AlGaN EBL in light-emitting diodes (LEDs). Numerical studies of the impact of variously doped EBLs on the output characteristics of LEDs demonstrate that the LED performance shows heavy dependence on the p-doping level in the case of the AlGaN EBL, while it shows less dependence on the p-doping level for the BAlN EBL. As a result, we propose an undoped BAlN EBL for LEDs to avoid the p-doping issues, which a major technical challenge in the AlGaN EBL. Without doping, the proposed BAlN EBL structure still possesses a superior capacity in blocking electrons and improving hole injection compared with the AlGaN EBL having high doping. Compared with the Al0.3Ga0.7N EBL with a doping concentration of 1×1020 /cm3, the undoped BAlN EBL LED still shows lower droop (only 5%), compatible internal quantum efficiency (2% enhancement), and optical output power (6% enhancement). This study provides a feasible route to addressing electron leakage and insufficient hole injection issues when designing UV LED structures.
dc.description.sponsorshipThe KAUST authors would like to acknowledge the support of KAUST Baseline Fund BAS/1/1664-01-01, GCC Research Council Grant REP/1/3189-01-01, and Competitive Research Grants URF/1/3437-01-01 and URF/1/3771-01-01. The authors of Institute of Semiconductors would like to acknowledge the support of National Key R&D Program of China 2016YFB0400800, National Natural Sciences Foundation of China 61875187, 61527814, 61674147, and U1505253, Beijing Nova Program Z181100006218007, and Youth Innovation Promotion Association CAS 2017157.
dc.publisherIOP Publishing
dc.relation.urlhttps://iopscience.iop.org/article/10.1088/1361-6463/abdefc
dc.rightsThis is an author-created, un-copyedited version of an article accepted for publication/published in Journal of Physics D: Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://doi.org/10.1088/1361-6463/abdefc
dc.titleBAlN for III-nitride UV light-emitting diodes: undoped electron blocking layer
dc.typeArticle
dc.contributor.departmentAdvanced Semiconductor Laboratory
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalJournal of Physics D: Applied Physics
dc.eprint.versionPost-print
dc.contributor.institutionInstitute of Semiconductors Chinese Academy of Sciences, Beijing, 100083, CHINA.
dc.contributor.institutionHebei University of Technology, Tianjin, 300401, CHINA.
dc.contributor.institutionUniversity of Houston, Houston, Texas, UNITED STATES.
dc.contributor.institutionResearch and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, A35, Tsinghua East Road, Haidian District, Beijing, 100083, CHINA.
dc.contributor.institutionInstitute of Semiconductors, Chinese Academy of Sciences - Beijing, Beijing, CHINA.
dc.identifier.arxivid2005.00929
kaust.personLu, Yi
kaust.personLin, Rongyu
kaust.personGuo, Wenzhe
kaust.personLi, Xiaohang
kaust.grant.numberBAS/1/1664-01-01
kaust.grant.numberREP/1/3189-01-01
kaust.grant.numberURF/1/3437-01-01
kaust.grant.numberURF/1/3771-01-01
dc.date.accepted2021-01-22
refterms.dateFOA2020-12-02T11:44:15Z
kaust.acknowledged.supportUnitCompetitive Research
dc.date.posted2020-05-02


Files in this item

Thumbnail
Name:
BAIN_Gu+et+al_2021_J._Phys._D__Appl._Phys._10.1088_1361-6463_abdefc (1).pdf
Size:
1.030Mb
Format:
PDF
Description:
Accepted manuscript

This item appears in the following Collection(s)

Show simple item record

VersionItemEditorDateSummary

*Selected version