BAlN for III-nitride UV light-emitting diodes: undoped electron blocking layer
KAUST DepartmentAdvanced Semiconductor Laboratory
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Physical Science and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/666240
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AbstractThe undoped BAlN electron-blocking layer (EBL) is investigated to replace the conventional AlGaN EBL in light-emitting diodes (LEDs). Numerical studies of the impact of variously doped EBLs on the output characteristics of LEDs demonstrate that the LED performance shows heavy dependence on the p-doping level in the case of the AlGaN EBL, while it shows less dependence on the p-doping level for the BAlN EBL. As a result, we propose an undoped BAlN EBL for LEDs to avoid the p-doping issues, which a major technical challenge in the AlGaN EBL. Without doping, the proposed BAlN EBL structure still possesses a superior capacity in blocking electrons and improving hole injection compared with the AlGaN EBL having high doping. Compared with the Al0.3Ga0.7N EBL with a doping concentration of 1×1020 /cm3, the undoped BAlN EBL LED still shows lower droop (only 5%), compatible internal quantum efficiency (2% enhancement), and optical output power (6% enhancement). This study provides a feasible route to addressing electron leakage and insufficient hole injection issues when designing UV LED structures.
CitationGu, W., Lu, Y., Lin, R., Guo, W., Zhang, Z.-H., Ryou, J.-H., … Li, X. (2021). BAlN for III-nitride UV light-emitting diodes: undoped electron blocking layer. Journal of Physics D: Applied Physics. doi:10.1088/1361-6463/abdefc
SponsorsThe KAUST authors would like to acknowledge the support of KAUST Baseline Fund BAS/1/1664-01-01, GCC Research Council Grant REP/1/3189-01-01, and Competitive Research Grants URF/1/3437-01-01 and URF/1/3771-01-01. The authors of Institute of Semiconductors would like to acknowledge the support of National Key R&D Program of China 2016YFB0400800, National Natural Sciences Foundation of China 61875187, 61527814, 61674147, and U1505253, Beijing Nova Program Z181100006218007, and Youth Innovation Promotion Association CAS 2017157.