BAlN for III-nitride UV light-emitting diodes: undoped electron blocking layer
KAUST DepartmentElectrical Engineering
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Physical Science and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/666240
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AbstractThe undoped BAlN electron-blocking layer (EBL) is investigated to replace the conventional AlGaN EBL in light-emitting diodes (LEDs). Numerical studies of the impact of variously doped EBLs on the output characteristics of LEDs demonstrate that the LED performance shows heavy dependence on the p-doping level in the case of the AlGaN EBL, while it shows less dependence on the p-doping level for the BAlN EBL. As a result, we propose an undoped BAlN EBL for LEDs to avoid the p-doping issues, which a major technical challenge in the AlGaN EBL. Without doping, the proposed BAlN EBL structure still possesses a superior capacity in blocking electrons and improving hole injection compared with the AlGaN EBL having high doping. Compared with the Al0.3Ga0.7N EBL with a doping concentration of 1×1020 /cm3, the undoped BAlN EBL LED still shows lower droop (only 5%), compatible internal quantum efficiency (2% enhancement), and optical output power (6% enhancement). This study provides a feasible route to addressing electron leakage and insufficient hole injection issues when designing UV LED structures.
CitationGu, W., Lu, Y., Lin, R., Guo, W., Zhang, Z.-H., Ryou, J.-H., … Li, X. (2021). BAlN for III-nitride UV light-emitting diodes: undoped electron blocking layer. Journal of Physics D: Applied Physics. doi:10.1088/1361-6463/abdefc
SponsorsThe KAUST authors would like to acknowledge the support of KAUST Baseline Fund BAS/1/1664-01-01, GCC Research Council Grant REP/1/3189-01-01, and Competitive Research Grants URF/1/3437-01-01 and URF/1/3771-01-01. The authors of Institute of Semiconductors would like to acknowledge the support of National Key R&D Program of China 2016YFB0400800, National Natural Sciences Foundation of China 61875187, 61527814, 61674147, and U1505253, Beijing Nova Program Z181100006218007, and Youth Innovation Promotion Association CAS 2017157.