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dc.contributor.authorCarey, Tian
dc.contributor.authorArbab, Adrees
dc.contributor.authorAnzi, Luca
dc.contributor.authorBristow, Helen
dc.contributor.authorHui, Fei
dc.contributor.authorBohm, Sivasambu
dc.contributor.authorWyatt-Moon, Gwenhivir
dc.contributor.authorFlewitt, Andrew
dc.contributor.authorWadsworth, Andrew
dc.contributor.authorGasparini, Nicola
dc.contributor.authorKim, Jong Min
dc.contributor.authorLanza, Mario
dc.contributor.authorMcCulloch, Iain
dc.contributor.authorSordan, Roman
dc.contributor.authorTorrisi, Felice
dc.date.accessioned2020-11-30T13:13:59Z
dc.date.available2020-11-30T13:13:59Z
dc.date.issued2020-11-24
dc.identifier.urihttp://hdl.handle.net/10754/666159
dc.description.abstractAir-stable semiconducting inks suitable for complementary logic are key to create low-power printed integrated circuits (ICs). High-performance printable electronic inks with two-dimensional materials have the potential to enable the next generation of high performance, low-cost printed digital electronics. Here we demonstrate air-stable, low voltage (< 5 V) operation of inkjet-printed n-type molybdenum disulfide (MoS2) and p-type indacenodithiophene-co-benzothiadiazole (IDT-BT) field-effect transistors (FETs), estimating a switching time of {\tau} ~ 3.3 {\mu}s for the MoS2 FETs. We achieve this by engineering high-quality MoS2 and air-stable IDT-BT inks suitable for inkjet-printing complementary pairs of n-type MoS2 and p-type IDT-BT FETs. We then integrate MoS2 and IDT-BT FETs to realise inkjet-printed complementary logic inverters with a voltage gain |Av| ~ 4 when in resistive load configuration and |Av| ~ 1.36 in complementary configuration. These results represent a key enabling step towards ubiquitous long-term stable, low-cost printed digital ICs.
dc.description.sponsorshipThe authors acknowledge funding from EPSRC grants EP/P02534X/2, EP/R511547/1, EP/T005106/1, Imperial College Collaboration Kick-Starter grant and Trinity College, Cambridge, the EU H2020 Graphene Flagship Core 3 Grant No. 881603, and a TechnionGuangdong Fellowship.
dc.publisherarXiv
dc.relation.urlhttps://arxiv.org/pdf/2011.12359
dc.rightsArchived with thanks to arXiv
dc.titleInkjet printed circuits with two-dimensional semiconductor inks for high-performance electronics
dc.typePreprint
dc.contributor.departmentPhysical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
dc.contributor.departmentChemical Science Program
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.eprint.versionPre-print
dc.contributor.institutionCambridge Graphene Centre, Department of Engineering, University of Cambridge, UK.
dc.contributor.institutionDepartment of Chemistry, Molecular Sciences Research Hub, Imperial College London, White City Campus, Wood Lane, London W12 0BZ, UK.
dc.contributor.institutionL-NESS, Department of Physics, Politecnico di Milano, Via Anzani 42, 22100 Como, Italy.
dc.contributor.institutionDepartment of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel.
dc.contributor.institutionCAPE Building, Department of Engineering, University of Cambridge, UK.
dc.contributor.institutionDepartment of Chemistry, Chemistry Research Laboratory, University of Oxford, Oxford, OX1 3TA, UK.
dc.identifier.arxivid2011.12359
kaust.personLanza, Mario
kaust.personMcCulloch, Iain
refterms.dateFOA2020-11-30T13:14:34Z


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