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    Inkjet printed circuits with two-dimensional semiconductor inks for high-performance electronics

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    Type
    Preprint
    Authors
    Carey, Tian
    Arbab, Adrees
    Anzi, Luca
    Bristow, Helen
    Hui, Fei
    Bohm, Sivasambu
    Wyatt-Moon, Gwenhivir
    Flewitt, Andrew
    Wadsworth, Andrew
    Gasparini, Nicola
    Kim, Jong Min
    Lanza, Mario
    McCulloch, Iain cc
    Sordan, Roman
    Torrisi, Felice
    KAUST Department
    Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
    Chemical Science Program
    KAUST Solar Center (KSC)
    Physical Science and Engineering (PSE) Division
    Date
    2020-11-24
    Permanent link to this record
    http://hdl.handle.net/10754/666159
    
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    Abstract
    Air-stable semiconducting inks suitable for complementary logic are key to create low-power printed integrated circuits (ICs). High-performance printable electronic inks with two-dimensional materials have the potential to enable the next generation of high performance, low-cost printed digital electronics. Here we demonstrate air-stable, low voltage (< 5 V) operation of inkjet-printed n-type molybdenum disulfide (MoS2) and p-type indacenodithiophene-co-benzothiadiazole (IDT-BT) field-effect transistors (FETs), estimating a switching time of {\tau} ~ 3.3 {\mu}s for the MoS2 FETs. We achieve this by engineering high-quality MoS2 and air-stable IDT-BT inks suitable for inkjet-printing complementary pairs of n-type MoS2 and p-type IDT-BT FETs. We then integrate MoS2 and IDT-BT FETs to realise inkjet-printed complementary logic inverters with a voltage gain |Av| ~ 4 when in resistive load configuration and |Av| ~ 1.36 in complementary configuration. These results represent a key enabling step towards ubiquitous long-term stable, low-cost printed digital ICs.
    Sponsors
    The authors acknowledge funding from EPSRC grants EP/P02534X/2, EP/R511547/1, EP/T005106/1, Imperial College Collaboration Kick-Starter grant and Trinity College, Cambridge, the EU H2020 Graphene Flagship Core 3 Grant No. 881603, and a TechnionGuangdong Fellowship.
    Publisher
    arXiv
    arXiv
    2011.12359
    Additional Links
    https://arxiv.org/pdf/2011.12359
    Collections
    Preprints; Physical Science and Engineering (PSE) Division; Chemical Science Program; KAUST Solar Center (KSC)

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