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dc.contributor.authorYuan, Bin
dc.contributor.authorLiang, Xianhu
dc.contributor.authorZhong, Liubiao
dc.contributor.authorShi, Yuanyuan
dc.contributor.authorPalumbo, Felix
dc.contributor.authorChen, Shaochuan
dc.contributor.authorHui, Fei
dc.contributor.authorJing, Xu
dc.contributor.authorVillena, Marco A.
dc.contributor.authorJiang, Lin
dc.contributor.authorLanza, Mario
dc.date.accessioned2020-11-22T10:34:17Z
dc.date.available2020-11-22T10:34:17Z
dc.date.issued2020-11-16
dc.date.submitted2019-01-26
dc.identifier.citationYuan, B., Liang, X., Zhong, L., Shi, Y., Palumbo, F., Chen, S., … Lanza, M. (2020). 150 nm × 200 nm Cross-Point Hexagonal Boron Nitride-Based Memristors. Advanced Electronic Materials, 1900115. doi:10.1002/aelm.201900115
dc.identifier.issn2199-160X
dc.identifier.issn2199-160X
dc.identifier.doi10.1002/aelm.201900115
dc.identifier.urihttp://hdl.handle.net/10754/666055
dc.description.abstractThe introduction of 2D materials in the structure of memristors has been shown to provide the devices with enhanced flexibility and transparency. However, their use is still not well justified, as the electrical performance of 2D materials-based memristors is still behind that of transition metal oxide (TMO)-based memristors. This work presents the fabrication of metal/h-BN/metal memristors with ultra-low power consumption that beat the previous record set by Au/HfOx:Ag/Au memristors. Moreover, all the methods used to synthesize the 2D materials and fabricate the devices are scalable (e.g., chemical vapor deposition synthesis), and the 2D materials-based memristors fabricated here use a vertical metal/insulator/metal configuration (i.e., low variability and 3D stackable). To the best of current knowledge, the metal/h-BN/metal memristors here presented are the smallest 2D materials-based memristors ever reported.
dc.description.sponsorshipThis work was supported by the Young 1000 Global Talent Recruitment Program of the Ministry of Education of China, the Ministry of Science and Technology of China (grant no. BRICS2018-211-2DNEURO), the National Natural Science Foundation of China (grants no. 61502326, 41550110223, 11661131002, 61874075), the Ministry of Finance of China (grant no. SX21400213), and the Young 973 National Program of the Chinese Ministry of Science and Technology (grant no. 2015CB932700). The Collaborative Innovation Center of Suzhou Nano Science & Technology, the Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, the Priority Academic Program Development of Jiangsu Higher Education Institutions, and the 111 Project from the State Administration of Foreign Experts Affairs are also acknowledged.
dc.publisherWiley
dc.relation.urlhttps://onlinelibrary.wiley.com/doi/10.1002/aelm.201900115
dc.rightsArchived with thanks to Advanced Electronic Materials
dc.title150 nm × 200 nm Cross-Point Hexagonal Boron Nitride-Based Memristors
dc.typeArticle
dc.contributor.departmentKing Abdullah University of Science and Technology, KAUST , Thuwal, Saudi Arabia.
dc.identifier.journalAdvanced Electronic Materials
dc.rights.embargodate2021-11-16
dc.eprint.versionPost-print
dc.contributor.institutionInstitute of Functional Nano & Soft Materials Collaborative Innovation Center of Suzhou Nano Science & Technology Soochow University 199 Ren-Ai Road Suzhou 215123 China
dc.contributor.institutionAndrew and Erna Viterbi Faculty of Electrical Engineering Technion - Israel Institute of Technology Haifa 32000 Israel
dc.contributor.institutionNational Scientific and Technical Research Council (CONICET) UTN-CNEA Godoy Cruz 2290 Buenos Aires Argentina
dc.contributor.institutionDepartment of Materials Science and Engineering Technion – Israel Institute of Technology Haifa 32000 Israel
dc.identifier.pages1900115
kaust.personLanza, Mario
dc.date.accepted2019-02-26
refterms.dateFOA2020-11-25T05:29:12Z


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