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    Multiple epitaxial lateral overgrowth of GaN thin films using a patterned graphene mask by metal organic chemical vapor deposition

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    Type
    Article
    Authors
    Lee, Jun-Yeob
    Min, Jung-Hong
    Bae, Si-Young
    Park, Mun-Do
    Jeong, Woo-Lim
    Park, Jeong-Hwan
    Kang, Chang-Mo
    Lee, Dong-Seon
    KAUST Department
    Photonics Laboratory, Computer, Electrical and Mathematical Sciences and Engineering(CEMSE) Division, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia.
    Date
    2020-11-17
    Online Publication Date
    2020-11-17
    Print Publication Date
    2020-12-01
    Submitted Date
    2020-07-10
    Permanent link to this record
    http://hdl.handle.net/10754/666052
    
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    Abstract
    Single-crystal gallium nitride (GaN) thin films were grown using a graphene mask via multiple epitaxial lateral overgrowth (multiple-ELOG). During the growth process, the graphene mask self-decomposed to enable the emergence of a GaN film with a thickness of several hundred nanometres. This is in contrast to selective area growth of GaN using an SiO2 mask leading to the well known hexagonal-pyramid shape under the same growth conditions. The multiple-ELOG GaN had a single-crystalline wurtzite structure corresponding to the crystallinity of the GaN template, which was confirmed with electron backscatter diffraction measurements. An X-ray diffraction rocking curve of the asymmetric 102 reflection showed that the FWHM for the multiple-ELOG GaN decreased to 405 from 540′′ for the underlying GaN template. From these results, the self-decomposition of the graphene mask during ELOG was experimentally proven to be affected by the GaN decomposition rather than the high-temperature/H2 growth conditions.
    Citation
    Lee, J.-Y., Min, J.-H., Bae, S.-Y., Park, M.-D., Jeong, W.-L., Park, J.-H., … Lee, D.-S. (2020). Multiple epitaxial lateral overgrowth of GaN thin films using a patterned graphene mask by metal organic chemical vapor deposition. Journal of Applied Crystallography, 53(6). doi:10.1107/s1600576720012856
    Sponsors
    This work was supported in part by a GIST Research Institute(GRI) grant funded by the GIST, and by Samsung Electronicsin 2020.
    Publisher
    International Union of Crystallography (IUCr)
    Journal
    Journal of Applied Crystallography
    DOI
    10.1107/s1600576720012856
    Additional Links
    https://scripts.iucr.org/cgi-bin/paper?S1600576720012856
    ae974a485f413a2113503eed53cd6c53
    10.1107/s1600576720012856
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