Multiple epitaxial lateral overgrowth of GaN thin films using a patterned graphene mask by metal organic chemical vapor deposition
KAUST DepartmentPhotonics Laboratory, Computer, Electrical and Mathematical Sciences and Engineering(CEMSE) Division, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia.
Online Publication Date2020-11-17
Print Publication Date2020-12-01
Permanent link to this recordhttp://hdl.handle.net/10754/666052
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AbstractSingle-crystal gallium nitride (GaN) thin films were grown using a graphene mask via multiple epitaxial lateral overgrowth (multiple-ELOG). During the growth process, the graphene mask self-decomposed to enable the emergence of a GaN film with a thickness of several hundred nanometres. This is in contrast to selective area growth of GaN using an SiO2 mask leading to the well known hexagonal-pyramid shape under the same growth conditions. The multiple-ELOG GaN had a single-crystalline wurtzite structure corresponding to the crystallinity of the GaN template, which was confirmed with electron backscatter diffraction measurements. An X-ray diffraction rocking curve of the asymmetric 102 reflection showed that the FWHM for the multiple-ELOG GaN decreased to 405 from 540′′ for the underlying GaN template. From these results, the self-decomposition of the graphene mask during ELOG was experimentally proven to be affected by the GaN decomposition rather than the high-temperature/H2 growth conditions.
CitationLee, J.-Y., Min, J.-H., Bae, S.-Y., Park, M.-D., Jeong, W.-L., Park, J.-H., … Lee, D.-S. (2020). Multiple epitaxial lateral overgrowth of GaN thin films using a patterned graphene mask by metal organic chemical vapor deposition. Journal of Applied Crystallography, 53(6). doi:10.1107/s1600576720012856
SponsorsThis work was supported in part by a GIST Research Institute(GRI) grant funded by the GIST, and by Samsung Electronicsin 2020.