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    Single-Crystalline All-Oxide α–γ–β Heterostructures for Deep-Ultraviolet Photodetection

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    Name:
    alpha-gamma-beta heterostructures-highlighted_revision final.pdf
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    Description:
    Accepted manuscript
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    Type
    Article
    Authors
    Li, Kuang-Hui cc
    Kang, Chun Hong cc
    Min, Jung-Hong
    Alfaraj, Nasir cc
    Liang, Jian Wei cc
    Braic, Laurentiu
    Guo, Zaibing
    Hedhili, Mohamed N. cc
    Ng, Tien Khee cc
    Ooi, Boon S. cc
    KAUST Department
    Material Science and Engineering Program
    Material Science and Engineering
    Physical Science and Engineering (PSE) Division
    Electrical Engineering Program
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Photonics Laboratory, Computer, Electrical and Mathematical Sciences and Engineering Division (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
    Electrical Engineering
    Thin Films & Characterization
    Surface Science
    KAUST Grant Number
    BAS/1/1614-01-01
    Date
    2020-11-17
    Embargo End Date
    2021-11-18
    Submitted Date
    2020-08-26
    Permanent link to this record
    http://hdl.handle.net/10754/666051
    
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    Abstract
    Recent advancements in gallium oxide (Ga2O3)-based heterostructures have allowed optoelectronic devices to be used extensively in the fields of power electronics and deep-ultraviolet photodetection. While most previous research has involved realizing single-crystalline Ga2O3 layers on native substrates for high conductivity and visible-light transparency, presented and investigated herein is a single-crystalline β-Ga2O3 layer grown on an α-Al2O3 substrate through an interfacial γ-In2O3 layer. The single-crystalline transparent conductive oxide layer made of wafer-scalable γ-In2O3 provides high carrier transport, visible-light transparency, and antioxidation properties that are critical for realizing vertically oriented heterostructures for transparent oxide photonic platforms. Physical characterization based on X-ray diffraction and high-resolution transmission electron microscopy imaging confirms the single-crystalline nature of the grown films and the crystallographic orientation relationships among the monoclinic β-Ga2O3, cubic γ-In2O3, and trigonal α-Al2O3, while the elemental composition and sharp interfaces across the heterostructure are confirmed by Rutherford backscattering spectrometry. Furthermore, the energy-band offsets are determined by X-ray photoelectron spectroscopy at the β-Ga2O3/γ-In2O3 interface, elucidating a type-II heterojunction with conduction- and valence-band offsets of 0.16 and 1.38 eV, respectively. Based on the single-crystalline β-Ga2O3/γ-In2O3/α-Al2O3 all-oxide heterostructure, a vertically oriented DUV photodetector is fabricated that exhibits a high photoresponsivity of 94.3 A/W, an external quantum efficiency of 4.6 × 104%, and a specific detectivity of 3.09 × 1012 Jones at 250 nm. The present demonstration lays a strong foundation for and paves the way to future all-oxide-based transparent photonic platforms.
    Citation
    Li, K.-H., Kang, C. H., Min, J.-H., Alfaraj, N., Liang, J.-W., Braic, L., … Ooi, B. S. (2020). Single-Crystalline All-Oxide α–γ–β Heterostructures for Deep-Ultraviolet Photodetection. ACS Applied Materials & Interfaces. doi:10.1021/acsami.0c15398
    Sponsors
    The authors acknowledge receipt of KAUST baseline funding (BAS/1/1614-01-01). T.K.N. and B.S.O. gratefully acknowledge funding from the King Abdulaziz City for Science and Technology (KACST) grant no. KACST TIC R2-FP-008.
    Publisher
    American Chemical Society (ACS)
    Journal
    ACS Applied Materials & Interfaces
    DOI
    10.1021/acsami.0c15398
    PubMed ID
    33203211
    Additional Links
    https://pubs.acs.org/doi/10.1021/acsami.0c15398
    ae974a485f413a2113503eed53cd6c53
    10.1021/acsami.0c15398
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Electrical and Computer Engineering Program; Material Science and Engineering Program; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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