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dc.contributor.authorWang, Yunfan
dc.contributor.authorXiang, Pan
dc.contributor.authorRen, Aobo
dc.contributor.authorLai, Huagui
dc.contributor.authorZhang, Zhuoqiong
dc.contributor.authorXuan, Zhipeng
dc.contributor.authorWan, Zhenxi
dc.contributor.authorZhang, Jingquan
dc.contributor.authorHao, Xia
dc.contributor.authorWu, Lili
dc.contributor.authorSugiyama, Masakazu
dc.contributor.authorSchwingenschlögl, Udo
dc.contributor.authorLiu, Cai
dc.contributor.authorTang, Zeguo
dc.contributor.authorWu, Jiang
dc.contributor.authorWang, Zhiming
dc.contributor.authorZhao, Dewei
dc.date.accessioned2020-11-19T10:33:25Z
dc.date.available2020-11-19T10:33:25Z
dc.date.issued2020-11-17
dc.date.submitted2020-09-27
dc.identifier.citationWang, Y., Xiang, P., Ren, A., Lai, H., Zhang, Z., Xuan, Z., … Zhao, D. (2020). MXene-Modulated Electrode/SnO2 Interface Boosting Charge Transport in Perovskite Solar Cells. ACS Applied Materials & Interfaces. doi:10.1021/acsami.0c17338
dc.identifier.issn1944-8244
dc.identifier.issn1944-8252
dc.identifier.pmid33200937
dc.identifier.doi10.1021/acsami.0c17338
dc.identifier.urihttp://hdl.handle.net/10754/666036
dc.description.abstractInterface engineering is imperative to boost the extraction capability in perovskite solar cells (PSCs). We propose a promising approach to enhance the electron mobility and charge transfer ability of tin oxide (SnO2) electron transport layer (ETL) by introducing a two-dimensional carbide (MXene) with strong interface interaction. The MXene-modified SnO2 ETL also offers a preferable growth platform for perovskite films with reduced trap density. Through a spatially resolved imaging technique, profoundly reduced non-radiative recombination and charge transport losses in PSCs based on MXene-modified SnO2 are also observed. As a result, the PSC achieves an enhanced efficiency of 20.65% with ultralow saturated current density and negligible hysteresis. We provide an in-depth mechanistic understanding of MXene interface engineering, offering an alternative approach to obtain efficient PSCs.
dc.description.sponsorshipWe would like to thank Dr. Yingming Zhu for SEM images capturing and analysis. This work was financially supported by the Science and Technology Program of Sichuan Province (nos. 2017GZ0052, 2019ZDZX0015, 2020YFH0079, and 2020JDJQ0030), the National Key Research, Development Program of China (no. 2019YFB2203400), the Fundamental Research Funds for the Central Universities (nos. YJ201722, YJ201955, and ZYGX2019Z018), the National Natural Science Foundation of China (no. 61974014), and China Postdoctoral Science Foundation (no. 232888). The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST).
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttps://pubs.acs.org/doi/10.1021/acsami.0c17338
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsami.0c17338.
dc.titleMXene-Modulated Electrode/SnO2 Interface Boosting Charge Transport in Perovskite Solar Cells
dc.typeArticle
dc.contributor.departmentComputational Physics and Materials Science (CPMS)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalACS Applied Materials & Interfaces
dc.rights.embargodate2021-11-17
dc.eprint.versionPost-print
dc.contributor.institutionInstitute of New Energy and Low-Carbon Technology & College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
dc.contributor.institutionInstitute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
dc.contributor.institutionDepartment of Physics, Institute of Advanced Materials, Hong Kong Baptist University, Kowloon Tong, Kowloon, Hong Kong SAR, China
dc.contributor.institutionResearch Center for Advanced Science and Technology, The University of Tokyo, Tokyo 153-8904, Japan
dc.contributor.institutionGuangdong Provincial Key Laboratory of Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, Guangdong, China
dc.contributor.institutionShenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, Guangdong, China
dc.contributor.institutionCollege of New Materials and New Energy, Shenzhen Technology University, Shenzhen 518118, Guangdong, China,
kaust.personSchwingenschlögl, Udo
dc.date.accepted2020-11-02


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