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dc.contributor.authorAftab, Sikandar
dc.contributor.authorSamiya
dc.contributor.authorUl Haq, Hafiz Mansoor
dc.contributor.authorYousuf, Saqlain
dc.contributor.authorKhan, Muhammad Usman
dc.contributor.authorAhmed, Zaheer
dc.contributor.authorAziz, Jamal
dc.contributor.authorIqbal, Muhammad Waqas
dc.contributor.authorur Rehman, Atteq
dc.contributor.authorIqbal, Muhammad Zahir
dc.date.accessioned2020-11-15T12:16:04Z
dc.date.available2020-11-15T12:16:04Z
dc.date.issued2020-11-08
dc.date.submitted2020-08-20
dc.identifier.citationAftab, S., Samiya, Ul Haq, H. M., Yousuf, S., Khan, M. U., Ahmed, Z., … Iqbal, M. Z. (2020). Van der Waals Multi-Heterostructures (PN, PIN, and NPN) for Dynamic Rectification in 2D Materials. Advanced Materials Interfaces, 2001479. doi:10.1002/admi.202001479
dc.identifier.issn2196-7350
dc.identifier.issn2196-7350
dc.identifier.doi10.1002/admi.202001479
dc.identifier.urihttp://hdl.handle.net/10754/665947
dc.description.abstractHere, van der Waals multi-heterojunctions (PN, NP, PIN, and NPN) are fabricated by stacking of MoTe2, hexagonal boron nitride (h-BN), and MoSe2 nanoflakes using a mechanical-exfoliation technique where the dynamic rectification is examined. Low-resistance metal contacts Al/Au and Pt/Au are applied to MoSe2 and MoTe2, respectively, and gate-dependent rectifying behavior is achieved, with a rectification ratio of up to 105 in PN devices. It is found that the performance of the device is enhanced by placing an interfacial layer h-BN between two opposite layers of 2D materials where the rectification ratio is found to be >106 with the ideality factor ≈1.3 in the PIN devices. Also, using the conventional Richardson's plot, the barrier heights of PN and PIN diodes are calculated to be 260 and 490 meV at zero gate bias, respectively. As well, the devices exhibit good performance with a built-in electric field observed in both PN and PIN diodes, which gives rise to an open-circuit voltage (Voc) and short-circuit current (Isc) under zero external bias. Remarkably, it is found that the performance of the devices also gets better by forming double heterojunction (NPN) layer than PN or NP layers. The device is also tested for a rectification application, and it successfully rectifies an input alternating-current signal. These findings are important for the development of nano- and optoelectronics devices.
dc.description.sponsorshipThis work was funded by the Higher Education Commission (HEC) of Pakistan under the National Research Program for Universities (NRPU) with Projects Nos. HEC/R&D/NRPU/2017/7876 and 5544/KPK/NRPU/R&D/HEC/2016.
dc.publisherWiley
dc.relation.urlhttps://onlinelibrary.wiley.com/doi/10.1002/admi.202001479
dc.rightsArchived with thanks to Advanced Materials Interfaces
dc.titleVan der Waals Multi-Heterostructures (PN, PIN, and NPN) for Dynamic Rectification in 2D Materials
dc.typeArticle
dc.contributor.departmentKAUST Solar Center (KSC) Physical Sciences and Engineering Division (PSE) King Abdullah University of Science and Technology (KAUST) Thuwal 23955-6900 Kingdom of Saudi Arabia
dc.identifier.journalAdvanced Materials Interfaces
dc.rights.embargodate2021-11-09
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Engineering Simon Fraser University Burnaby BC V5A 1S6 Canada
dc.contributor.institutionDepartment of Environmental Engineering Sejong University 209 Neungdong-ro Gwangjin-gu Seoul 05006 South Korea
dc.contributor.institutionDepartment of Chemistry The University of Sargodha Sargodha 40100 Pakistan
dc.contributor.institutionDepartment of Physics Sungkyunkwan University Suwon 440-746 South Korea
dc.contributor.institutionNational Key Laboratory of Tunable Laser Technology Institute of Optoelectronics Department of Electronics Science and Technology Harbin Institute of Technology Harbin 150080 China
dc.contributor.institutionDepartment of Biochemistry University of Agriculture Faisalabad 38000 Pakistan
dc.contributor.institutionDepartment of Electrical Engineering Sejong University 209 Neungdong-ro Gwangjin-gu Seoul 05006 South Korea
dc.contributor.institutionDepartment of Physics Riphah International University 14 Ali Road Lahore 54000 Pakistan
dc.contributor.institutionNanotechnology Research Laboratory Faculty of Engineering Sciences GIK Institute of Engineering Sciences and Technology Topi Khyber Pakhtunkhwa 23640 Pakistan
dc.identifier.pages2001479
kaust.personur Rehman, Atteq
dc.date.accepted2020-10-09
refterms.dateFOA2020-11-18T05:20:41Z


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