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    Van der Waals Multi-Heterostructures (PN, PIN, and NPN) for Dynamic Rectification in 2D Materials

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    Vander_admi.202001479_R1.pdf
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    Description:
    Accepted manuscript
    Embargo End Date:
    2021-11-09
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    Type
    Article
    Authors
    Aftab, Sikandar cc
    Samiya
    Ul Haq, Hafiz Mansoor
    Yousuf, Saqlain
    Khan, Muhammad Usman
    Ahmed, Zaheer
    Aziz, Jamal
    Iqbal, Muhammad Waqas
    ur Rehman, Atteq
    Iqbal, Muhammad Zahir
    KAUST Department
    KAUST Solar Center (KSC) Physical Sciences and Engineering Division (PSE) King Abdullah University of Science and Technology (KAUST) Thuwal 23955-6900 Kingdom of Saudi Arabia
    Date
    2020-11-08
    Embargo End Date
    2021-11-09
    Submitted Date
    2020-08-20
    Permanent link to this record
    http://hdl.handle.net/10754/665947
    
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    Abstract
    Here, van der Waals multi-heterojunctions (PN, NP, PIN, and NPN) are fabricated by stacking of MoTe2, hexagonal boron nitride (h-BN), and MoSe2 nanoflakes using a mechanical-exfoliation technique where the dynamic rectification is examined. Low-resistance metal contacts Al/Au and Pt/Au are applied to MoSe2 and MoTe2, respectively, and gate-dependent rectifying behavior is achieved, with a rectification ratio of up to 105 in PN devices. It is found that the performance of the device is enhanced by placing an interfacial layer h-BN between two opposite layers of 2D materials where the rectification ratio is found to be >106 with the ideality factor ≈1.3 in the PIN devices. Also, using the conventional Richardson's plot, the barrier heights of PN and PIN diodes are calculated to be 260 and 490 meV at zero gate bias, respectively. As well, the devices exhibit good performance with a built-in electric field observed in both PN and PIN diodes, which gives rise to an open-circuit voltage (Voc) and short-circuit current (Isc) under zero external bias. Remarkably, it is found that the performance of the devices also gets better by forming double heterojunction (NPN) layer than PN or NP layers. The device is also tested for a rectification application, and it successfully rectifies an input alternating-current signal. These findings are important for the development of nano- and optoelectronics devices.
    Citation
    Aftab, S., Samiya, Ul Haq, H. M., Yousuf, S., Khan, M. U., Ahmed, Z., … Iqbal, M. Z. (2020). Van der Waals Multi-Heterostructures (PN, PIN, and NPN) for Dynamic Rectification in 2D Materials. Advanced Materials Interfaces, 2001479. doi:10.1002/admi.202001479
    Sponsors
    This work was funded by the Higher Education Commission (HEC) of Pakistan under the National Research Program for Universities (NRPU) with Projects Nos. HEC/R&D/NRPU/2017/7876 and 5544/KPK/NRPU/R&D/HEC/2016.
    Publisher
    Wiley
    Journal
    Advanced Materials Interfaces
    DOI
    10.1002/admi.202001479
    Additional Links
    https://onlinelibrary.wiley.com/doi/10.1002/admi.202001479
    ae974a485f413a2113503eed53cd6c53
    10.1002/admi.202001479
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