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dc.contributor.authorEl Bouanani, Lidia
dc.contributor.authorSerna, Martha I.
dc.contributor.authorM. N. Hasan, Syed
dc.contributor.authorMurillo, Bayron L.
dc.contributor.authorNam, Seungjin
dc.contributor.authorChoi, Hyunjoo
dc.contributor.authorAlshareef, Husam N.
dc.contributor.authorQuevedo-Lopez, Manuel A.
dc.date.accessioned2020-11-11T11:01:46Z
dc.date.available2020-11-11T11:01:46Z
dc.date.issued2020-11-09
dc.date.submitted2020-08-27
dc.identifier.citationEl Bouanani, L., Serna, M. I., M. N. Hasan, S., Murillo, B. L., Nam, S., Choi, H., … Quevedo-Lopez, M. A. (2020). Large-Area Pulsed Laser Deposited Molybdenum Diselenide Heterojunction Photodiodes. ACS Applied Materials & Interfaces. doi:10.1021/acsami.0c15462
dc.identifier.issn1944-8244
dc.identifier.issn1944-8252
dc.identifier.doi10.1021/acsami.0c15462
dc.identifier.urihttp://hdl.handle.net/10754/665893
dc.description.abstractTwo-dimensional (2D) semiconductors, such as transition-metal dichalcogenides (TMDs), have attracted immense interest due to their excellent electronic and optical properties. The combination of single and multilayered 2D TMDs coupled with either Si or II–VI semiconductors can result in robust and reliable photodetectors. In this paper, we report the deposition process of MoSe2-layered films using pulsed laser deposition (PLD) over areas of 20 cm2 with a tunable band gap. Raman and X-ray diffraction indicates crystalline and highly oriented layered MoSe2. X-ray photoelectron spectroscopy shows Mo and Se present in the first few layers of the film. Rutherford backscattering demonstrates the effect of O and C on the surface and film/substrate interface of the deposited films. Ultraviolet–visible spectroscopy, Kelvin probe, photoelectron spectroscopy, and electrical measurements are used to investigate the band diagram and electrical property dependence as a function of MoSe2 layers/thickness. As the MoSe2 thickness increases from 3.5 to 11.4 nm, the band gap decreases from 1.98 to 1.75 eV, the work function increases from 4.52 to 4.72 eV, the ionization energy increases from 5.71 to 5.77 eV, the sheet resistance decreases from 541 to 56.0 kΩ, the contact resistance decreases from 187 to 54.6 Ω·cm2, and the transfer length increases from 2.27 to 61.9 nm. Transmission electron microscopy (TEM) cross-sectional images demonstrate the layered structure of the MoSe2 with an average interlayer spacing of 0.68 nm. The fabricated MoSe2–Si photodiodes demonstrate a current on/off ratio of ∼2 × 104 orders of magnification and photocurrent generation with a 22.5 ns rise time and a 190.8 ns decay time, respectively.
dc.description.sponsorshipThis work was supported by AFSOR Grants FA9550−18−1−0019 and NSF/PFI:AIR TT 1701192. We would like to thank Nini Mathews for the use of the ultraviolet−visible spectroscopy system, Julia Hsu, Weijie Xu, and Maria Isabel PintorMonroy for the use and assistance of the scanning Kelvin probe and PESA systems, and Salvador Moreno for the fabrication flow figures.
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttps://pubs.acs.org/doi/10.1021/acsami.0c15462
dc.titleLarge-Area Pulsed Laser Deposited Molybdenum Diselenide Heterojunction Photodiodes
dc.typeArticle
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalACS Applied Materials & Interfaces
dc.rights.embargodate2021-11-10
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Materials Science and Engineering, The University of Texas at Dallas, 800 W Campbell Rd, Richardson, Texas 75080, United States
dc.contributor.institutionDepartment of Electrical Engineering, The University of Texas at Dallas, 800 W Campbell Rd, Richardson, Texas 75080, United States
dc.contributor.institutionMicroelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd, Bldg 160, Austin, Texas 78758, United States
dc.contributor.institutionDepartment of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, United States
dc.contributor.institutionSchool of Advanced Materials Engineering, Kookmin University, 77, Jeongneungro, Seongbuk-gu, Seoul 136-702, Korea
kaust.personAlshareef, Husam N.
dc.date.accepted2020-10-29
dc.date.published-online2020-11-09
dc.date.published-print2020-11-18


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