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    Large-Area Pulsed Laser Deposited Molybdenum Diselenide Heterojunction Photodiodes

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    Type
    Article
    Authors
    El Bouanani, Lidia cc
    Serna, Martha I.
    M. N. Hasan, Syed
    Murillo, Bayron L.
    Nam, Seungjin
    Choi, Hyunjoo
    Alshareef, Husam N. cc
    Quevedo-Lopez, Manuel A. cc
    KAUST Department
    Functional Nanomaterials and Devices Research Group
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2020-11-09
    Online Publication Date
    2020-11-09
    Print Publication Date
    2020-11-18
    Embargo End Date
    2021-11-10
    Submitted Date
    2020-08-27
    Permanent link to this record
    http://hdl.handle.net/10754/665893
    
    Metadata
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    Abstract
    Two-dimensional (2D) semiconductors, such as transition-metal dichalcogenides (TMDs), have attracted immense interest due to their excellent electronic and optical properties. The combination of single and multilayered 2D TMDs coupled with either Si or II–VI semiconductors can result in robust and reliable photodetectors. In this paper, we report the deposition process of MoSe2-layered films using pulsed laser deposition (PLD) over areas of 20 cm2 with a tunable band gap. Raman and X-ray diffraction indicates crystalline and highly oriented layered MoSe2. X-ray photoelectron spectroscopy shows Mo and Se present in the first few layers of the film. Rutherford backscattering demonstrates the effect of O and C on the surface and film/substrate interface of the deposited films. Ultraviolet–visible spectroscopy, Kelvin probe, photoelectron spectroscopy, and electrical measurements are used to investigate the band diagram and electrical property dependence as a function of MoSe2 layers/thickness. As the MoSe2 thickness increases from 3.5 to 11.4 nm, the band gap decreases from 1.98 to 1.75 eV, the work function increases from 4.52 to 4.72 eV, the ionization energy increases from 5.71 to 5.77 eV, the sheet resistance decreases from 541 to 56.0 kΩ, the contact resistance decreases from 187 to 54.6 Ω·cm2, and the transfer length increases from 2.27 to 61.9 nm. Transmission electron microscopy (TEM) cross-sectional images demonstrate the layered structure of the MoSe2 with an average interlayer spacing of 0.68 nm. The fabricated MoSe2–Si photodiodes demonstrate a current on/off ratio of ∼2 × 104 orders of magnification and photocurrent generation with a 22.5 ns rise time and a 190.8 ns decay time, respectively.
    Citation
    El Bouanani, L., Serna, M. I., M. N. Hasan, S., Murillo, B. L., Nam, S., Choi, H., … Quevedo-Lopez, M. A. (2020). Large-Area Pulsed Laser Deposited Molybdenum Diselenide Heterojunction Photodiodes. ACS Applied Materials & Interfaces. doi:10.1021/acsami.0c15462
    Sponsors
    This work was supported by AFSOR Grants FA9550−18−1−0019 and NSF/PFI:AIR TT 1701192. We would like to thank Nini Mathews for the use of the ultraviolet−visible spectroscopy system, Julia Hsu, Weijie Xu, and Maria Isabel PintorMonroy for the use and assistance of the scanning Kelvin probe and PESA systems, and Salvador Moreno for the fabrication flow figures.
    Publisher
    American Chemical Society (ACS)
    Journal
    ACS Applied Materials & Interfaces
    DOI
    10.1021/acsami.0c15462
    Additional Links
    https://pubs.acs.org/doi/10.1021/acsami.0c15462
    ae974a485f413a2113503eed53cd6c53
    10.1021/acsami.0c15462
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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