Show simple item record

dc.contributor.authorLee, Ko Chun
dc.contributor.authorRetamal, Jose Ramon Duran
dc.contributor.authorXue, Fei
dc.contributor.authorCheng, Bin
dc.contributor.authorTang, Hao Ling
dc.contributor.authorChiu, Ming Hui
dc.contributor.authorHu, Wei Jin
dc.contributor.authorWu, Chih I.
dc.contributor.authorChen, Mei Hsin
dc.contributor.authorLi, Lain-Jong
dc.contributor.authorLien, Chen Hsin
dc.contributor.authorHe, Jr-Hau
dc.date.accessioned2020-11-04T12:23:29Z
dc.date.available2020-11-04T12:23:29Z
dc.date.issued2020-09-23
dc.identifier.citationLee, K.-C., Retamal, J. R. D., Xue, F., Cheng, B., Tang, H.-L., Chiu, M.-H., … He, J.-H. (2020). Giant Electroresistance Switching of Two-dimensional Ferroelectric α-In2Se3 on p+-Si. 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA). doi:10.1109/vlsi-tsa48913.2020.9203707
dc.identifier.isbn9781728142326
dc.identifier.doi10.1109/VLSI-TSA48913.2020.9203707
dc.identifier.urihttp://hdl.handle.net/10754/665813
dc.description.abstractRecently, the demonstration of the ferroelectricity of phase In2Se3( -In2Se3) has opened new opportunities to develop two-dimensional small bandgap ferroelectric memories. Conventional ferroelectric hetero-junction memories have been widely studied but the performance is still limited by the large bandgap of oxide-based ferroelectric materials and limits the diode ON current and results in low ON/OFF ratio. Accordingly, we propose a novel resistive switching memory device based on the unique ferroelectric and semiconductor properties of -In2Se3. By forming the hetero-junction of -In2Se3 with the highly degenerated \mathrmp+ -Si substrate, we achieve a giant ferroelectric resistive ON/OFF ratio of 2.3 106.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.urlhttps://ieeexplore.ieee.org/document/9203707/
dc.rightsArchived with thanks to IEEE
dc.titleGiant Electroresistance Switching of Two-dimensional Ferroelectric α-In2Se3on p+-Si
dc.typeConference Paper
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentKing Abdullah University of Science and Technology,Computer, Electrical and Mathematical Science and Engineering Division,Thuwal,Kingdom of Saudi Arabia
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentNano Energy Lab
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.conference.date2020-08-10 to 2020-08-13
dc.conference.name2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
dc.conference.locationHsinchu, TWN
dc.eprint.versionPost-print
dc.contributor.institutionInstitute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan
dc.contributor.institutionShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, China
dc.contributor.institutionDepartment of Electrical Engineering, National Taiwan University
dc.contributor.institutionDepartment of Electro-optical Engineering, National Taipei University of Technology
dc.contributor.institutionDepartment of Materials Science and Engineering, University of New South Wales, Australia
dc.identifier.pages88-89
kaust.personLee, Ko Chun
kaust.personXue, Fei
kaust.personWu, Chih I.
kaust.personLi, Lain-Jong
kaust.personLien, Chen Hsin
kaust.personHe, Jr-Hau
dc.identifier.eid2-s2.0-85093697740
refterms.dateFOA2020-11-05T13:29:07Z
dc.date.published-online2020-09-23
dc.date.published-print2020-08


Files in this item

Thumbnail
Name:
TSA_Giant Electroresistance Switching of Two-dimensional Ferroelectric α-In2Se3 on p+-Si.pdf
Size:
353.8Kb
Format:
PDF
Description:
Accepted manuscript

This item appears in the following Collection(s)

Show simple item record