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    Giant Electroresistance Switching of Two-dimensional Ferroelectric α-In2Se3on p+-Si

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    TSA_Giant Electroresistance Switching of Two-dimensional Ferroelectric α-In2Se3 on p+-Si.pdf
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    Description:
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    Type
    Conference Paper
    Authors
    Lee, Ko Chun
    Retamal, Jose Ramon Duran
    Xue, Fei
    Cheng, Bin
    Tang, Hao Ling
    Chiu, Ming Hui
    Hu, Wei Jin
    Wu, Chih I.
    Chen, Mei Hsin
    Li, Lain-Jong cc
    Lien, Chen Hsin
    He, Jr-Hau cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    KAUST Solar Center (KSC)
    King Abdullah University of Science and Technology,Computer, Electrical and Mathematical Science and Engineering Division,Thuwal,Kingdom of Saudi Arabia
    Material Science and Engineering Program
    Nano Energy Lab
    Physical Science and Engineering (PSE) Division
    Date
    2020-09-23
    Online Publication Date
    2020-09-23
    Print Publication Date
    2020-08
    Permanent link to this record
    http://hdl.handle.net/10754/665813
    
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    Abstract
    Recently, the demonstration of the ferroelectricity of phase In2Se3( -In2Se3) has opened new opportunities to develop two-dimensional small bandgap ferroelectric memories. Conventional ferroelectric hetero-junction memories have been widely studied but the performance is still limited by the large bandgap of oxide-based ferroelectric materials and limits the diode ON current and results in low ON/OFF ratio. Accordingly, we propose a novel resistive switching memory device based on the unique ferroelectric and semiconductor properties of -In2Se3. By forming the hetero-junction of -In2Se3 with the highly degenerated \mathrmp+ -Si substrate, we achieve a giant ferroelectric resistive ON/OFF ratio of 2.3 106.
    Citation
    Lee, K.-C., Retamal, J. R. D., Xue, F., Cheng, B., Tang, H.-L., Chiu, M.-H., … He, J.-H. (2020). Giant Electroresistance Switching of Two-dimensional Ferroelectric α-In2Se3 on p+-Si. 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA). doi:10.1109/vlsi-tsa48913.2020.9203707
    Publisher
    Institute of Electrical and Electronics Engineers (IEEE)
    Conference/Event name
    2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
    ISBN
    9781728142326
    DOI
    10.1109/VLSI-TSA48913.2020.9203707
    Additional Links
    https://ieeexplore.ieee.org/document/9203707/
    ae974a485f413a2113503eed53cd6c53
    10.1109/VLSI-TSA48913.2020.9203707
    Scopus Count
    Collections
    Conference Papers; Physical Science and Engineering (PSE) Division; Electrical and Computer Engineering Program; Material Science and Engineering Program; KAUST Solar Center (KSC); Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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