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dc.contributor.authorTu, Teng
dc.contributor.authorZhang, Yichi
dc.contributor.authorLi, Tianran
dc.contributor.authorYu, Jia
dc.contributor.authorLiu, L. M.
dc.contributor.authorWu, Jinxiong
dc.contributor.authorTan, Congwei
dc.contributor.authorTang, Jilin
dc.contributor.authorLiang, Yan
dc.contributor.authorZhang, Congcong
dc.contributor.authorDai, Yumin
dc.contributor.authorHan, Yu
dc.contributor.authorLai, Keji
dc.contributor.authorPeng, Hailin
dc.date.accessioned2020-11-02T12:23:34Z
dc.date.available2020-11-02T12:23:34Z
dc.date.issued2020-09-03
dc.date.submitted2020-07-17
dc.identifier.citationTu, T., Zhang, Y., Li, T., Yu, J., Liu, L., Wu, J., … Peng, H. (2020). Uniform High-k Amorphous Native Oxide Synthesized by Oxygen Plasma for Top-Gated Transistors. Nano Letters, 20(10), 7469–7475. doi:10.1021/acs.nanolett.0c02951
dc.identifier.issn1530-6992
dc.identifier.pmid32881534
dc.identifier.doi10.1021/acs.nanolett.0c02951
dc.identifier.urihttp://hdl.handle.net/10754/665760
dc.description.abstractThe integration of high-k gate dielectrics with two-dimensional (2D) semiconducting channel materials is essential for high-performance and low-power electronics. However, the conformal deposition of a uniform high-k dielectric with sub-1 nm equivalent oxide thickness (EOT) and high interface quality on high-mobility 2D semiconductors is still challenging. Here, we report a facile approach to synthesize a uniform high-k (εr ∼ 22) amorphous native oxide Bi2SeOx on the high-mobility 2D semiconducting Bi2O2Se using O2 plasma at room temperature. The conformal native oxide can directly serve as gate dielectrics with EOT of ∼0.9 nm, while the original properties of underlying 2D Bi2O2Se is preserved. Furthermore, high-resolution area-selective oxidation of Bi2O2Se is achieved to fabricate discrete electronic components. This facile integration of a high-mobility 2D semiconductor and its high-k native oxide holds high promise for next-generation nanoelectronics.
dc.description.sponsorshipThe authors acknowledge financial support from the National Natural Science Foundation of China (21733001, 21525310, and 51672007) and the National Basic Research Program of China (2016YFA0200101). J.Y. and K.L. were supported by the United States Department of Energy (DOE), Office of Science, Basic Energy Sciences, under the award no. DESC0019025.
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttps://pubs.acs.org/doi/10.1021/acs.nanolett.0c02951
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acs.nanolett.0c02951.
dc.titleUniform High-k Amorphous Native Oxide Synthesized by Oxygen Plasma for Top-Gated Transistors.
dc.typeArticle
dc.contributor.departmentAdvanced Membranes and Porous Materials Research Center
dc.contributor.departmentChemical Science Program
dc.contributor.departmentNanostructured Functional Materials (NFM) laboratory
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalNano letters
dc.rights.embargodate2021-09-04
dc.eprint.versionPost-print
dc.contributor.institutionCenter for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
dc.contributor.institutionDepartment of Physics, University of Texas at Austin, Austin, Texas 78712, United States
dc.contributor.institutionTianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, School of Materials Science and Engineering, National Institute for Advanced Materials, Nankai University, Tianjin 300350, China
dc.contributor.institutionAcademy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
dc.identifier.volume20
dc.identifier.issue10
dc.identifier.pages7469-7475
kaust.personLiu, Lingmei
kaust.personHan, Yu
dc.date.accepted2020-08-26
dc.identifier.eid2-s2.0-85092944322
dc.date.published-online2020-09-03
dc.date.published-print2020-10-14


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