Uniform High-k Amorphous Native Oxide Synthesized by Oxygen Plasma for Top-Gated Transistors.
Liu, L. M.
KAUST DepartmentAdvanced Membranes and Porous Materials Research Center
Chemical Science Program
Nanostructured Functional Materials (NFM) laboratory
Physical Science and Engineering (PSE) Division
Embargo End Date2021-09-04
Permanent link to this recordhttp://hdl.handle.net/10754/665760
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AbstractThe integration of high-k gate dielectrics with two-dimensional (2D) semiconducting channel materials is essential for high-performance and low-power electronics. However, the conformal deposition of a uniform high-k dielectric with sub-1 nm equivalent oxide thickness (EOT) and high interface quality on high-mobility 2D semiconductors is still challenging. Here, we report a facile approach to synthesize a uniform high-k (εr ∼ 22) amorphous native oxide Bi2SeOx on the high-mobility 2D semiconducting Bi2O2Se using O2 plasma at room temperature. The conformal native oxide can directly serve as gate dielectrics with EOT of ∼0.9 nm, while the original properties of underlying 2D Bi2O2Se is preserved. Furthermore, high-resolution area-selective oxidation of Bi2O2Se is achieved to fabricate discrete electronic components. This facile integration of a high-mobility 2D semiconductor and its high-k native oxide holds high promise for next-generation nanoelectronics.
CitationTu, T., Zhang, Y., Li, T., Yu, J., Liu, L., Wu, J., … Peng, H. (2020). Uniform High-k Amorphous Native Oxide Synthesized by Oxygen Plasma for Top-Gated Transistors. Nano Letters, 20(10), 7469–7475. doi:10.1021/acs.nanolett.0c02951
SponsorsThe authors acknowledge financial support from the National Natural Science Foundation of China (21733001, 21525310, and 51672007) and the National Basic Research Program of China (2016YFA0200101). J.Y. and K.L. were supported by the United States Department of Energy (DOE), Office of Science, Basic Energy Sciences, under the award no. DESC0019025.
PublisherAmerican Chemical Society (ACS)