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dc.contributor.authorBouzidi, Mohamed
dc.contributor.authorAlshammari, Abdullah S.
dc.contributor.authorSoltani, Sonia
dc.contributor.authorHalidou, Ibrahim
dc.contributor.authorChine, Zied
dc.contributor.authorRaza Khan, Ziaul
dc.contributor.authorChaaben, Noureddine
dc.contributor.authorShakfa, Mohammad Khaled
dc.date.accessioned2020-11-01T10:52:06Z
dc.date.available2020-11-01T10:52:06Z
dc.date.issued2020-10-22
dc.date.submitted2020-04-13
dc.identifier.citationBouzidi, M., Alshammari, A. S., Soltani, S., Halidou, I., Chine, Z., Raza Khan, Z., … Shakfa, M. K. (2021). Correlation of structural and optical properties of AlGaN films grown on SiN-treated sapphire by MOVPE. Materials Science and Engineering: B, 263, 114866. doi:10.1016/j.mseb.2020.114866
dc.identifier.issn0921-5107
dc.identifier.doi10.1016/j.mseb.2020.114866
dc.identifier.urihttp://hdl.handle.net/10754/665732
dc.description.abstractWe investigated the structural and optical properties of AlGaN films grown on SiN-treated sapphire substrates, without and with GaN-template, by atmospheric pressure metal organic vapor phase epitaxy. The samples were characterized using high-resolution X-ray diffraction (HR-XRD), time-resolved photoluminescence (TR-PL), and photoreflectance (PR) spectroscopies. Furthermore, the carrier mobility was determined from Hall-effect measurements. When the AlGaN (GaN-template) layer thickness increases up to 0.6 µm (1.3 µm), an increase in the PL decay times is observed and correlated with the transition from 3D to 2D growth mode resulting in a decrease in the dislocations density as obtained from the HR-XRD measurements. Beyond the aforementioned layer thicknesses, we observed a deterioration in the PL transient corresponds to an increase in the density of VAl-related complexes during the relaxation process, which act as non-radiative recombination centers. Our observations strongly suggest that this type of defects influences the carrier transport and carrier recombination process in the AlGaN layers. Furthermore, our results reveal a phenomenological linear relationship between the internal electric field, obtained from the PR measurements, and the dislocations density. This finding predicts an increase in the GaN internal electric field by about 147 KV/cm when the Al content is increased to 7% in the AlGaN layers. We attribute this increase to a rise in the polarization-induced electric field due to Al incorporation in the AlGaN layer. Based on the obtained correlation between the internal electric field and the dislocation density, we propose an experimental approach that can be utilized to determine the internal electric field, at zero dislocation density, which is very important for designing high-efficient electronic and optoelectronic devices.
dc.description.sponsorshipThis research has been funded by Scientific Research Deanship at the University of Ha'il (Saudi Arabia), through project number RG-191242. The authors are very grateful to Prof. Dr. Martin Koch of the physics department of the Philipp University of Marburg for giving the opportunity to perform time-resolved photoluminescence measurements in his laboratory.
dc.publisherElsevier BV
dc.relation.urlhttps://linkinghub.elsevier.com/retrieve/pii/S0921510720303731
dc.rightsNOTICE: this is the author’s version of a work that was accepted for publication in Materials Science and Engineering B: Solid-State Materials for Advanced Technology. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Materials Science and Engineering B: Solid-State Materials for Advanced Technology, [263, , (2020-10-22)] DOI: 10.1016/j.mseb.2020.114866 . © 2020. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.titleCorrelation of structural and optical properties of AlGaN films grown on SiN-treated sapphire by MOVPE
dc.typeArticle
dc.contributor.departmentKing Abdullah University of Science & Technology (KAUST), Physical Science and Engineering Division, Thuwal 23955-6900, Saudi Arabia
dc.identifier.journalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
dc.rights.embargodate2022-10-22
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Physics, Faculty of Science, University of Ha'il, P.O. Box 2440, Ha'il, Saudi Arabia
dc.contributor.institutionUniversité de Monastir, Faculté des Sciences, Unité de recherche sur les Hétéro-Epitaxies et Applications (URHEA), 5000 Monastir, Tunisia
dc.contributor.institutionDepartement de Physique, Faculté des Sciences et Techniques, Université Abdou Moumouni, BP 10662, Niger
dc.identifier.volume263
dc.identifier.pages114866
kaust.personShakfa, Mohammad Khaled
dc.date.accepted2020-10-05
dc.identifier.eid2-s2.0-85093681707
refterms.dateFOA2020-11-02T07:00:20Z


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