100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale
AuthorsGeorgiadou, Dimitra G
Sagade, Abhay A.
Anthopoulos, Thomas D.
KAUST DepartmentMaterial Science and Engineering Program
Material Science and Engineering
Physical Science and Engineering (PSE) Division
KAUST Solar Center (KSC)
KAUST Grant NumberOSR-2018-CARF/CCF-3079
Online Publication Date2020-10-19
Print Publication Date2020-11
Embargo End Date2021-04-19
Permanent link to this recordhttp://hdl.handle.net/10754/665719
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AbstractInexpensive radio-frequency devices that can meet the ultrahigh-frequency needs of fifth- and sixth-generation wireless telecommunication networks are required. However, combining high performance with cost-effective scalable manufacturing has proved challenging. Here, we report the fabrication of solution-processed zinc oxide Schottky diodes that can operate in microwave and millimetre-wave frequency bands. The fully coplanar diodes are prepared using wafer-scale adhesion lithography to pattern two asymmetric metal electrodes separated by a gap of around 15 nm, and are completed with the deposition of a zinc oxide or aluminium-doped ZnO layer from solution. The Schottky diodes exhibit a maximum intrinsic cutoff frequency in excess of 100 GHz, and when integrated with other passive components yield radio-frequency energy-harvesting circuits that are capable of delivering output voltages of 600 mV and 260 mV at 2.45 GHz and 10 GHz, respectively.
CitationGeorgiadou, D. G., Semple, J., Sagade, A. A., Forstén, H., Rantakari, P., Lin, Y.-H., … Anthopoulos, T. D. (2020). 100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale. Nature Electronics. doi:10.1038/s41928-020-00484-7
SponsorsD.G.G., J.S. and T.D.A. acknowledge financial support from the European Union Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement 706707, the European Research Council (ERC) project AMPRO under grant no. 280221, the Engineering and Physical Sciences Research Council (EPSRC) grant no. EP/P505550/1 and the EPSRC Centre for Innovative Manufacturing in Large Area Electronics (CIM-LAE) grant no. EP/K03099X/1. A.S., K.L., H.F. and T.D.A. acknowledge support by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under award no. OSR-2018-CARF/CCF-3079. A.A.S. thanks SERB for an Early Research Career Award (ECR/2017/1562) and SRM IST for financial support. We also thank S. Kano for helpful discussion on the nanogap size analysis.
PublisherSpringer Science and Business Media LLC