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    100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale

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    100 GHz.pdf
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    Description:
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    Type
    Article
    Authors
    Georgiadou, Dimitra G cc
    Semple, James
    Sagade, Abhay A. cc
    Forstén, Henrik
    Rantakari, Pekka
    Lin, Yen-Hung cc
    Alkhalil, Feras
    Seitkhan, Akmaral cc
    Loganathan, Kalaivanan cc
    Faber, Hendrik cc
    Anthopoulos, Thomas D. cc
    KAUST Department
    Material Science and Engineering Program
    Material Science and Engineering
    Physical Science and Engineering (PSE) Division
    KAUST Solar Center (KSC)
    KAUST Grant Number
    OSR-2018-CARF/CCF-3079
    Date
    2020-10-19
    Online Publication Date
    2020-10-19
    Print Publication Date
    2020-11
    Embargo End Date
    2021-04-19
    Submitted Date
    2020-03-17
    Permanent link to this record
    http://hdl.handle.net/10754/665719
    
    Metadata
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    Abstract
    Inexpensive radio-frequency devices that can meet the ultrahigh-frequency needs of fifth- and sixth-generation wireless telecommunication networks are required. However, combining high performance with cost-effective scalable manufacturing has proved challenging. Here, we report the fabrication of solution-processed zinc oxide Schottky diodes that can operate in microwave and millimetre-wave frequency bands. The fully coplanar diodes are prepared using wafer-scale adhesion lithography to pattern two asymmetric metal electrodes separated by a gap of around 15 nm, and are completed with the deposition of a zinc oxide or aluminium-doped ZnO layer from solution. The Schottky diodes exhibit a maximum intrinsic cutoff frequency in excess of 100 GHz, and when integrated with other passive components yield radio-frequency energy-harvesting circuits that are capable of delivering output voltages of 600 mV and 260 mV at 2.45 GHz and 10 GHz, respectively.
    Citation
    Georgiadou, D. G., Semple, J., Sagade, A. A., Forstén, H., Rantakari, P., Lin, Y.-H., … Anthopoulos, T. D. (2020). 100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale. Nature Electronics. doi:10.1038/s41928-020-00484-7
    Sponsors
    D.G.G., J.S. and T.D.A. acknowledge financial support from the European Union Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement 706707, the European Research Council (ERC) project AMPRO under grant no. 280221, the Engineering and Physical Sciences Research Council (EPSRC) grant no. EP/P505550/1 and the EPSRC Centre for Innovative Manufacturing in Large Area Electronics (CIM-LAE) grant no. EP/K03099X/1. A.S., K.L., H.F. and T.D.A. acknowledge support by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under award no. OSR-2018-CARF/CCF-3079. A.A.S. thanks SERB for an Early Research Career Award (ECR/2017/1562) and SRM IST for financial support. We also thank S. Kano for helpful discussion on the nanogap size analysis.
    Publisher
    Springer Nature
    Journal
    Nature Electronics
    DOI
    10.1038/s41928-020-00484-7
    Additional Links
    http://www.nature.com/articles/s41928-020-00484-7
    ae974a485f413a2113503eed53cd6c53
    10.1038/s41928-020-00484-7
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program; KAUST Solar Center (KSC)

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