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dc.contributor.authorChen, Wei
dc.contributor.authorWang, Yang
dc.contributor.authorLiu, Bin
dc.contributor.authorGao, Yajun
dc.contributor.authorWu, Ziang
dc.contributor.authorShi, Yongqiang
dc.contributor.authorTang, Yumin
dc.contributor.authorYang, Kun
dc.contributor.authorZhang, Yujie
dc.contributor.authorSun, Weipeng
dc.contributor.authorFeng, Xiyuan
dc.contributor.authorLaquai, Frédéric
dc.contributor.authorWoo, Han Young
dc.contributor.authorDjurišić, Aleksandra B.
dc.contributor.authorGuo, Xugang
dc.contributor.authorHe, Zhubing
dc.date.accessioned2020-10-29T12:05:01Z
dc.date.available2020-10-29T12:05:01Z
dc.date.issued2020-10-15
dc.date.submitted2020-07-07
dc.identifier.citationChen, W., Wang, Y., Liu, B., Gao, Y., Wu, Z., Shi, Y., … He, Z. (2020). Engineering of dendritic dopant-free hole transport molecules: enabling ultrahigh fill factor in perovskite solar cells with optimized dendron construction. Science China Chemistry. doi:10.1007/s11426-020-9857-1
dc.identifier.issn1869-1870
dc.identifier.issn1674-7291
dc.identifier.doi10.1007/s11426-020-9857-1
dc.identifier.urihttp://hdl.handle.net/10754/665712
dc.description.abstractDeveloping dopant-free hole-transporting materials (HTMs) for high-performance perovskite solar cells (PVSCs) has been a very active research topic in recent years since HTMs play a critical role in optimizing interfacial charge carrier kinetics and in turn determining device performance. Here, a novel dendritic engineering strategy is first utilized to design HTMs with a D-A type molecular framework, and diphenylamine and/or carbazole is selected as the building block for constructing dendrons. All HTMs show good thermal stability and excellent film morphology, and the key optoelectronic properties could be fine-tuned by varying the dendron structure. Among them, MPA-Cz-BTI and MCz-Cz-BTI exhibit an improved interfacial contact with the perovskite active layer, and non-radiative recombination loss and charge transport loss can be effectively suppressed. Consequently, high power conversion efficiencies (PCEs) of 20.8% and 21.35% are achieved for MPA-Cz-BTI and MCz-Cz-BTI based devices, respectively, accompanied by excellent long-term storage stability. More encouragingly, ultrahigh fill factors of 85.2% and 83.5% are recorded for both devices, which are among the highest values reported to date. This work demonstrates the great potential of dendritic materials as a new type of dopant-free HTMs for high-performance PVSCs with excellent FF.
dc.description.sponsorshipThis work was supported by the National Natural Science Foundation of China (21805128, 21774055, 61775091), Shenzhen Key Laboratory Project (ZDSYS201602261933302), Shenzhen Innovation Committee (JCYJ20180504165851864), Shenzhen Innovation Committee (JCYJ20170818141216288), and the Seed Funding for Strategic Interdisciplinary Research Scheme of the University of Hong Kong. We are grateful to the assistance of SUSTech Core Research Facilities.
dc.publisherSpringer Nature
dc.relation.urlhttp://link.springer.com/10.1007/s11426-020-9857-1
dc.rightsArchived with thanks to Science China Chemistry
dc.titleEngineering of dendritic dopant-free hole transport molecules: enabling ultrahigh fill factor in perovskite solar cells with optimized dendron construction
dc.typeArticle
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentKAUST Solar Center (KSC)
dc.identifier.journalScience China Chemistry
dc.rights.embargodate2021-10-17
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
dc.contributor.institutionDepartment of Physics, The University of Hong Kong, Pokfulam, Hong Kong, China
dc.contributor.institutionDepartment of Chemistry, Korea University, Seoul, 02841, South Korea
kaust.personGao, Yajun
kaust.personLaquai, Frederic
dc.date.accepted2020-08-25
dc.identifier.eid2-s2.0-85092619306
refterms.dateFOA2020-11-02T11:00:44Z


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