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dc.contributor.authorSun, Minglei
dc.contributor.authorSchwingenschlögl, Udo
dc.date.accessioned2020-10-29T05:47:38Z
dc.date.available2020-10-29T05:47:38Z
dc.date.issued2020-10-09
dc.date.submitted2020-07-27
dc.identifier.citationSun, M., & Schwingenschlögl, U. (2020). δ-CS: A Direct-Band-Gap Semiconductor Combining Auxeticity, Ferroelasticity, and Potential for High-Efficiency Solar Cells. Physical Review Applied, 14(4). doi:10.1103/physrevapplied.14.044015
dc.identifier.issn2331-7019
dc.identifier.doi10.1103/PhysRevApplied.14.044015
dc.identifier.urihttp://hdl.handle.net/10754/665696
dc.description.abstractWe propose a two-dimensional material, δ-CS, and show that it is a direct-band-gap semiconductor with strong absorption of solar radiation. Power conversion efficiencies of 7.0% to 20.1% are predicted for solar cells with δ-CS as a donor and a transition metal dichalcogenide as an acceptor. δ-CS also excels in terms of having an exceptionally large negative in-plane Poisson's ratio. Its ferroelasticity with moderate switching barrier is promising for applications in shape memory devices.
dc.description.sponsorshipThe research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST). We thank Dr. Huabing Shu and Mr. Ziang Zhang for assistance with PYTHON programming.
dc.publisherAmerican Physical Society (APS)
dc.relation.urlhttps://link.aps.org/doi/10.1103/PhysRevApplied.14.044015
dc.rightsArchived with thanks to Physical Review Applied
dc.titleδ-CS: A Direct-Band-Gap Semiconductor Combining Auxeticity, Ferroelasticity, and Potential for High-Efficiency Solar Cells
dc.typeArticle
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalPhysical Review Applied
dc.eprint.versionPost-print
dc.identifier.volume14
dc.identifier.issue4
kaust.personSun, Minglei
kaust.personSchwingenschlögl, Udo
dc.date.accepted2020-08-25
dc.identifier.eid2-s2.0-85093359802
refterms.dateFOA2020-12-16T11:42:10Z


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