δ-CS: A Direct-Band-Gap Semiconductor Combining Auxeticity, Ferroelasticity, and Potential for High-Efficiency Solar Cells
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ArticleAuthors
Sun, Minglei
Schwingenschlögl, Udo

KAUST Department
Physical Science and Engineering (PSE) DivisionDate
2020-10-09Submitted Date
2020-07-27Permanent link to this record
http://hdl.handle.net/10754/665696
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We propose a two-dimensional material, δ-CS, and show that it is a direct-band-gap semiconductor with strong absorption of solar radiation. Power conversion efficiencies of 7.0% to 20.1% are predicted for solar cells with δ-CS as a donor and a transition metal dichalcogenide as an acceptor. δ-CS also excels in terms of having an exceptionally large negative in-plane Poisson's ratio. Its ferroelasticity with moderate switching barrier is promising for applications in shape memory devices.Citation
Sun, M., & Schwingenschlögl, U. (2020). δ-CS: A Direct-Band-Gap Semiconductor Combining Auxeticity, Ferroelasticity, and Potential for High-Efficiency Solar Cells. Physical Review Applied, 14(4). doi:10.1103/physrevapplied.14.044015Sponsors
The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST). We thank Dr. Huabing Shu and Mr. Ziang Zhang for assistance with PYTHON programming.Publisher
American Physical Society (APS)Journal
Physical Review AppliedAdditional Links
https://link.aps.org/doi/10.1103/PhysRevApplied.14.044015ae974a485f413a2113503eed53cd6c53
10.1103/PhysRevApplied.14.044015