δ-CS: A Direct-Band-Gap Semiconductor Combining Auxeticity, Ferroelasticity, and Potential for High-Efficiency Solar Cells
KAUST DepartmentPhysical Science and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/665696
MetadataShow full item record
AbstractWe propose a two-dimensional material, δ-CS, and show that it is a direct-band-gap semiconductor with strong absorption of solar radiation. Power conversion efficiencies of 7.0% to 20.1% are predicted for solar cells with δ-CS as a donor and a transition metal dichalcogenide as an acceptor. δ-CS also excels in terms of having an exceptionally large negative in-plane Poisson's ratio. Its ferroelasticity with moderate switching barrier is promising for applications in shape memory devices.
CitationSun, M., & Schwingenschlögl, U. (2020). δ-CS: A Direct-Band-Gap Semiconductor Combining Auxeticity, Ferroelasticity, and Potential for High-Efficiency Solar Cells. Physical Review Applied, 14(4). doi:10.1103/physrevapplied.14.044015
SponsorsThe research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST). We thank Dr. Huabing Shu and Mr. Ziang Zhang for assistance with PYTHON programming.
PublisherAmerican Physical Society (APS)
JournalPhysical Review Applied