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dc.contributor.authorIida, Daisuke
dc.contributor.authorZhuang, Zhe
dc.contributor.authorKirilenko, Pavel
dc.contributor.authorVelazquez-Rizo, Martin
dc.contributor.authorOhkawa, Kazuhiro
dc.date.accessioned2020-10-28T08:33:03Z
dc.date.available2020-10-28T08:33:03Z
dc.date.issued2020-10-27
dc.date.submitted2020-08-20
dc.identifier.citationIida, D., Zhuang, Z., Kirilenko, P., Velazquez-Rizo, M., & Ohkawa, K. (2020). High-color-rendering-index phosphor-free InGaN-based white light-emitting diodes by carrier injection enhancement via V-pits. Applied Physics Letters, 117(17), 172103. doi:10.1063/5.0026017
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.doi10.1063/5.0026017
dc.identifier.urihttp://hdl.handle.net/10754/665671
dc.description.abstractWe herein report the growth of phosphor-free InGaN-based white light-emitting diodes (LEDs) by metalorganic vapor-phase epitaxy. The active region consists of blue and red InGaN quantum wells (QWs). To improve the current injection and generate broadband emission, the V-pit structures in the LEDs were fabricated intentionally before growing the QWs. The monolithic white LEDs emit in the range of 410–770 nm and, by tuning the injection current, can cover correlated color temperature (CCT) values corresponding to warm white, natural white, and cool white. The color-rendering index (CRI) of the white LEDs reaches 88 at an injection current of 10 mA. At an injection current of 30 mA, the white LEDs exhibit the chromaticity coordinates of (0.320 and 0.334) in the Commission Internationale de l’Eclairage 1931 chromaticity diagram, a CRI of 78, and a CCT of 6110 K.
dc.publisherAIP Publishing
dc.relation.urlhttp://aip.scitation.org/doi/10.1063/5.0026017
dc.rightsAll article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.titleHigh-color-rendering-index phosphor-free InGaN-based white light-emitting diodes by carrier injection enhancement via V-pits
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering
dc.contributor.departmentElectrical Engineering Program
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
dc.identifier.volume117
dc.identifier.issue17
dc.identifier.pages172103
kaust.personIida, Daisuke
kaust.personZhuang, Zhe
kaust.personKirilenko, Pavel
kaust.personVelazquez-Rizo, Martin
kaust.personOhkawa, Kazuhiro
dc.date.accepted2020-10-11
refterms.dateFOA2020-10-28T08:33:48Z
dc.date.published-online2020-10-27
dc.date.published-print2020-10-26


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