High-color-rendering-index phosphor-free InGaN-based white light-emitting diodes by carrier injection enhancement via V-pits
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Online Publication Date2020-10-27
Print Publication Date2020-10-26
Permanent link to this recordhttp://hdl.handle.net/10754/665671
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AbstractWe herein report the growth of phosphor-free InGaN-based white light-emitting diodes (LEDs) by metalorganic vapor-phase epitaxy. The active region consists of blue and red InGaN quantum wells (QWs). To improve the current injection and generate broadband emission, the V-pit structures in the LEDs were fabricated intentionally before growing the QWs. The monolithic white LEDs emit in the range of 410–770 nm and, by tuning the injection current, can cover correlated color temperature (CCT) values corresponding to warm white, natural white, and cool white. The color-rendering index (CRI) of the white LEDs reaches 88 at an injection current of 10 mA. At an injection current of 30 mA, the white LEDs exhibit the chromaticity coordinates of (0.320 and 0.334) in the Commission Internationale de l’Eclairage 1931 chromaticity diagram, a CRI of 78, and a CCT of 6110 K.
CitationIida, D., Zhuang, Z., Kirilenko, P., Velazquez-Rizo, M., & Ohkawa, K. (2020). High-color-rendering-index phosphor-free InGaN-based white light-emitting diodes by carrier injection enhancement via V-pits. Applied Physics Letters, 117(17), 172103. doi:10.1063/5.0026017
JournalApplied Physics Letters
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