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dc.contributor.authorIsakov, Ivan
dc.contributor.authorFaber, Hendrik
dc.contributor.authorMottram, Alexander D.
dc.contributor.authorDas, Satyajit
dc.contributor.authorGrell, Max
dc.contributor.authorRegoutz, Anna
dc.contributor.authorKilmurray, Rebecca
dc.contributor.authorMcLachlan, Martyn A.
dc.contributor.authorPayne, David J.
dc.contributor.authorAnthopoulos, Thomas D.
dc.date.accessioned2020-10-06T08:03:47Z
dc.date.available2020-10-06T08:03:47Z
dc.date.issued2020-10-04
dc.date.submitted2020-06-30
dc.identifier.citationIsakov, I., Faber, H., Mottram, A. D., Das, S., Grell, M., Regoutz, A., … Anthopoulos, T. D. (2020). Quantum Confinement and Thickness-Dependent Electron Transport in Solution-Processed In 2 O 3 Transistors. Advanced Electronic Materials, 2000682. doi:10.1002/aelm.202000682
dc.identifier.issn2199-160X
dc.identifier.issn2199-160X
dc.identifier.doi10.1002/aelm.202000682
dc.identifier.urihttp://hdl.handle.net/10754/665454
dc.description.abstractThe dependence of charge carrier mobility on semiconductor channel thickness in field-effect transistors is a universal phenomenon that has been studied extensively for various families of materials. Surprisingly, analogous studies involving metal oxide semiconductors are relatively scarce. Here, spray-deposited In2O3 layers are employed as the model semiconductor system to study the impact of layer thickness on quantum confinement and electron transport along the transistor channel. The results reveal an exponential increase of the in-plane electron mobility (µe) with increasing In2O3 thickness up to ≈10 nm, beyond which it plateaus at a maximum value of ≈35 cm2 V−1 s−1. Optical spectroscopy measurements performed on In2O3 layers reveal the emergence of quantum confinement for thickness <10 nm, which coincides with the thickness that µe starts deteriorating. By combining two- and four-probe field-effect mobility measurements with high-resolution atomic force microscopy, it is shown that the reduction in µe is attributed primarily to surface scattering. The study provides important guidelines for the design of next generation metal oxide thin-film transistors.
dc.description.sponsorshipThe authors would like to thank Katerina Chernova for fruitful discussions on ellipsometry. This publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No: OSR-2018-CARF/CCF-3079.
dc.publisherWiley
dc.relation.urlhttps://onlinelibrary.wiley.com/doi/10.1002/aelm.202000682
dc.rightsArchived with thanks to Advanced Electronic Materials
dc.titleQuantum Confinement and Thickness-Dependent Electron Transport in Solution-Processed In 2 O 3 Transistors
dc.typeArticle
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentKAUST Solar Center (KSC)
dc.identifier.journalAdvanced Electronic Materials
dc.rights.embargodate2021-10-05
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Physics and Centre for Plastic Electronics Blackett Laboratory Imperial College London London SW7 2BW UK
dc.contributor.institutionDepartment of Chemistry University College London 20 Gordon Street London WC1H 0AJ UK
dc.contributor.institutionDepartment of Materials Royal School of Mines Imperial College London London SW7 2AZ UK
dc.identifier.pages2000682
kaust.personFaber, Hendrik
kaust.personAnthopoulos, Thomas D.
kaust.grant.numberOSR-2018-CARF/CCF-3079
dc.date.accepted2020-09-03
refterms.dateFOA2020-10-06T10:31:41Z
kaust.acknowledged.supportUnitOSR
dc.date.published-online2020-10-04
dc.date.published-print2020-11


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