Quantum Confinement and Thickness-Dependent Electron Transport in Solution-Processed In 2 O 3 Transistors
Type
ArticleAuthors
Isakov, IvanFaber, Hendrik

Mottram, Alexander D.
Das, Satyajit
Grell, Max
Regoutz, Anna
Kilmurray, Rebecca
McLachlan, Martyn A.
Payne, David J.
Anthopoulos, Thomas D.

KAUST Department
Physical Science and Engineering (PSE) DivisionMaterial Science and Engineering Program
KAUST Solar Center (KSC)
KAUST Grant Number
OSR-2018-CARF/CCF-3079Date
2020-10-04Online Publication Date
2020-10-04Print Publication Date
2020-11Embargo End Date
2021-10-05Submitted Date
2020-06-30Permanent link to this record
http://hdl.handle.net/10754/665454
Metadata
Show full item recordAbstract
The dependence of charge carrier mobility on semiconductor channel thickness in field-effect transistors is a universal phenomenon that has been studied extensively for various families of materials. Surprisingly, analogous studies involving metal oxide semiconductors are relatively scarce. Here, spray-deposited In2O3 layers are employed as the model semiconductor system to study the impact of layer thickness on quantum confinement and electron transport along the transistor channel. The results reveal an exponential increase of the in-plane electron mobility (µe) with increasing In2O3 thickness up to ≈10 nm, beyond which it plateaus at a maximum value of ≈35 cm2 V−1 s−1. Optical spectroscopy measurements performed on In2O3 layers reveal the emergence of quantum confinement for thickness <10 nm, which coincides with the thickness that µe starts deteriorating. By combining two- and four-probe field-effect mobility measurements with high-resolution atomic force microscopy, it is shown that the reduction in µe is attributed primarily to surface scattering. The study provides important guidelines for the design of next generation metal oxide thin-film transistors.Citation
Isakov, I., Faber, H., Mottram, A. D., Das, S., Grell, M., Regoutz, A., … Anthopoulos, T. D. (2020). Quantum Confinement and Thickness-Dependent Electron Transport in Solution-Processed In 2 O 3 Transistors. Advanced Electronic Materials, 2000682. doi:10.1002/aelm.202000682Sponsors
The authors would like to thank Katerina Chernova for fruitful discussions on ellipsometry. This publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No: OSR-2018-CARF/CCF-3079.Publisher
WileyJournal
Advanced Electronic MaterialsAdditional Links
https://onlinelibrary.wiley.com/doi/10.1002/aelm.202000682ae974a485f413a2113503eed53cd6c53
10.1002/aelm.202000682