Quantum Confinement and Thickness-Dependent Electron Transport in Solution-Processed In 2 O 3 Transistors
Mottram, Alexander D.
McLachlan, Martyn A.
Payne, David J.
Anthopoulos, Thomas D.
KAUST DepartmentPhysical Science and Engineering (PSE) Division
Material Science and Engineering Program
KAUST Solar Center (KSC)
KAUST Grant NumberOSR-2018-CARF/CCF-3079
Online Publication Date2020-10-04
Print Publication Date2020-11
Embargo End Date2021-10-05
Permanent link to this recordhttp://hdl.handle.net/10754/665454
MetadataShow full item record
AbstractThe dependence of charge carrier mobility on semiconductor channel thickness in field-effect transistors is a universal phenomenon that has been studied extensively for various families of materials. Surprisingly, analogous studies involving metal oxide semiconductors are relatively scarce. Here, spray-deposited In2O3 layers are employed as the model semiconductor system to study the impact of layer thickness on quantum confinement and electron transport along the transistor channel. The results reveal an exponential increase of the in-plane electron mobility (µe) with increasing In2O3 thickness up to ≈10 nm, beyond which it plateaus at a maximum value of ≈35 cm2 V−1 s−1. Optical spectroscopy measurements performed on In2O3 layers reveal the emergence of quantum confinement for thickness <10 nm, which coincides with the thickness that µe starts deteriorating. By combining two- and four-probe field-effect mobility measurements with high-resolution atomic force microscopy, it is shown that the reduction in µe is attributed primarily to surface scattering. The study provides important guidelines for the design of next generation metal oxide thin-film transistors.
CitationIsakov, I., Faber, H., Mottram, A. D., Das, S., Grell, M., Regoutz, A., … Anthopoulos, T. D. (2020). Quantum Confinement and Thickness-Dependent Electron Transport in Solution-Processed In 2 O 3 Transistors. Advanced Electronic Materials, 2000682. doi:10.1002/aelm.202000682
SponsorsThe authors would like to thank Katerina Chernova for fruitful discussions on ellipsometry. This publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No: OSR-2018-CARF/CCF-3079.
JournalAdvanced Electronic Materials