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    Quantum Confinement and Thickness-Dependent Electron Transport in Solution-Processed In 2 O 3 Transistors

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    Name:
    quantum.pdf
    Size:
    1.493Mb
    Format:
    PDF
    Description:
    Accepted manuscript
    Embargo End Date:
    2021-10-05
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    Type
    Article
    Authors
    Isakov, Ivan
    Faber, Hendrik cc
    Mottram, Alexander D.
    Das, Satyajit
    Grell, Max
    Regoutz, Anna
    Kilmurray, Rebecca
    McLachlan, Martyn A.
    Payne, David J.
    Anthopoulos, Thomas D. cc
    KAUST Department
    Physical Science and Engineering (PSE) Division
    Material Science and Engineering Program
    KAUST Solar Center (KSC)
    KAUST Grant Number
    OSR-2018-CARF/CCF-3079
    Date
    2020-10-04
    Online Publication Date
    2020-10-04
    Print Publication Date
    2020-11
    Embargo End Date
    2021-10-05
    Submitted Date
    2020-06-30
    Permanent link to this record
    http://hdl.handle.net/10754/665454
    
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    Abstract
    The dependence of charge carrier mobility on semiconductor channel thickness in field-effect transistors is a universal phenomenon that has been studied extensively for various families of materials. Surprisingly, analogous studies involving metal oxide semiconductors are relatively scarce. Here, spray-deposited In2O3 layers are employed as the model semiconductor system to study the impact of layer thickness on quantum confinement and electron transport along the transistor channel. The results reveal an exponential increase of the in-plane electron mobility (µe) with increasing In2O3 thickness up to ≈10 nm, beyond which it plateaus at a maximum value of ≈35 cm2 V−1 s−1. Optical spectroscopy measurements performed on In2O3 layers reveal the emergence of quantum confinement for thickness <10 nm, which coincides with the thickness that µe starts deteriorating. By combining two- and four-probe field-effect mobility measurements with high-resolution atomic force microscopy, it is shown that the reduction in µe is attributed primarily to surface scattering. The study provides important guidelines for the design of next generation metal oxide thin-film transistors.
    Citation
    Isakov, I., Faber, H., Mottram, A. D., Das, S., Grell, M., Regoutz, A., … Anthopoulos, T. D. (2020). Quantum Confinement and Thickness-Dependent Electron Transport in Solution-Processed In 2 O 3 Transistors. Advanced Electronic Materials, 2000682. doi:10.1002/aelm.202000682
    Sponsors
    The authors would like to thank Katerina Chernova for fruitful discussions on ellipsometry. This publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No: OSR-2018-CARF/CCF-3079.
    Publisher
    Wiley
    Journal
    Advanced Electronic Materials
    DOI
    10.1002/aelm.202000682
    Additional Links
    https://onlinelibrary.wiley.com/doi/10.1002/aelm.202000682
    ae974a485f413a2113503eed53cd6c53
    10.1002/aelm.202000682
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program; KAUST Solar Center (KSC)

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