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dc.contributor.authorXin, Bin
dc.contributor.authorAlaal, Naresh
dc.contributor.authorMitra, Somak
dc.contributor.authorSubahi, Ahmad
dc.contributor.authorPak, Yusin
dc.contributor.authorAlmalawi, Dhaifallah
dc.contributor.authorAlwadai, Norah M.
dc.contributor.authorLopatin, Sergei
dc.contributor.authorRoqan, Iman S.
dc.date.accessioned2020-10-04T12:15:38Z
dc.date.available2020-10-04T12:15:38Z
dc.date.issued2020-10
dc.date.submitted2020-07-26
dc.identifier.citationXin, B., Alaal, N., Mitra, S., Subahi, A., Pak, Y., Almalawi, D., … Roqan, I. S. (2020). Identifying Carrier Behavior in Ultrathin Indirect-Bandgap CsPbX3 Nanocrystal Films for Use in UV/Visible-Blind High-Energy Detectors. Small, 2004513. doi:10.1002/smll.202004513
dc.identifier.issn1613-6810
dc.identifier.issn1613-6829
dc.identifier.doi10.1002/smll.202004513
dc.identifier.urihttp://hdl.handle.net/10754/665425
dc.description.abstractHigh-energy radiation detectors such as X-ray detectors with low light photoresponse characteristics are used for several applications including, space, medical, and military devices. Here, an indirect bandgap inorganic perovskite-based X-ray detector is reported. The indirect bandgap nature of perovskite materials is revealed through optical characterizations, time-resolved photoluminescence (TRPL), and theoretical simulations, demonstrating that the differences in temperature-dependent carrier lifetime related to CsPbX3 (X = Br, I) perovskite composition are due to the changes in the bandgap structure. TRPL, theoretical analyses, and X-ray radiation measurements reveal that the high response of the UV/visible-blind yellow-phase CsPbI3 under high-energy X-ray exposure is attributed to the nature of the indirect bandgap structure of CsPbX3. The yellow-phase CsPbI3-based X-ray detector achieves a relatively high sensitivity of 83.6 μCGyair−1 cm−2 (under 1.7 mGyair s−1 at an electron field of 0.17 V μm−1 used for medical diagnostics) although the active layer is based solely on an ultrathin (≈6.6 μm) CsPbI3 nanocrystal film, exceeding the values obtained for commercial X-ray detectors, and further confirming good material quality. This CsPbX3 X-ray detector is sufficient for cost-effective device miniaturization based on a simple design.
dc.description.sponsorshipThis work was financially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding (BAS/1/1319-01-01). The authors thank the KAUST Medical Center (KMC) located at the KAUST campus for providing their X-ray facilities for carrying out the measurements.
dc.publisherWiley
dc.relation.urlhttps://onlinelibrary.wiley.com/doi/10.1002/smll.202004513
dc.rightsArchived with thanks to Small
dc.titleIdentifying Carrier Behavior in Ultrathin Indirect-Bandgap CsPbX3 Nanocrystal Films for Use in UV/Visible-Blind High-Energy Detectors
dc.typeArticle
dc.contributor.departmentElectron Microscopy
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentSemiconductor and Material Spectroscopy (SMS) Laboratory
dc.identifier.journalSmall
dc.rights.embargodate2021-10-02
dc.eprint.versionPost-print
dc.contributor.institutionCollege of Science and Health Professions King Saud Bin Abdulaziz University for Health Sciences (KSAU-HS) Jeddah 22384 Saudi Arabia
dc.contributor.institutionPhysics Department Faculty of Science Taif University P. O. Box 888 Taif 21974 Saudi Arabia
dc.contributor.institutionDepartment of Physics College of Sciences Princess Nourah bint Abdulrahman University (PNU) Riyadh 11671 Saudi Arabia
dc.identifier.pages2004513
kaust.personXin, Bin
kaust.personAlaal, Naresh
kaust.personMitra, Somak
kaust.personPak, Yusin
kaust.personAlmalawi, Dhaifallah
kaust.personAlwadai, Norah Mohammed Mosfer
kaust.personLopatin, Sergei
kaust.personRoqan, Iman S.
kaust.grant.numberBAS/1/1319-01-01
dc.date.accepted2020-10-02
refterms.dateFOA2020-10-04T13:20:51Z
dc.date.published-online2020-10
dc.date.published-print2020-10


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