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    Identifying Carrier Behavior in Ultrathin Indirect-Bandgap CsPbX3 Nanocrystal Films for Use in UV/Visible-Blind High-Energy Detectors

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    X-ray-MS_final.pdf
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    Description:
    Accepted manuscript
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    Type
    Article
    Authors
    Xin, Bin cc
    Alaal, Naresh
    Mitra, Somak cc
    Subahi, Ahmad
    Pak, Yusin
    Almalawi, Dhaifallah
    Alwadai, Norah M. cc
    Lopatin, Sergei
    Roqan, Iman S. cc
    KAUST Department
    Electron Microscopy
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Semiconductor and Material Spectroscopy (SMS) Laboratory
    KAUST Grant Number
    BAS/1/1319-01-01
    Date
    2020-10
    Online Publication Date
    2020-10
    Print Publication Date
    2020-10
    Embargo End Date
    2021-10-02
    Submitted Date
    2020-07-26
    Permanent link to this record
    http://hdl.handle.net/10754/665425
    
    Metadata
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    Abstract
    High-energy radiation detectors such as X-ray detectors with low light photoresponse characteristics are used for several applications including, space, medical, and military devices. Here, an indirect bandgap inorganic perovskite-based X-ray detector is reported. The indirect bandgap nature of perovskite materials is revealed through optical characterizations, time-resolved photoluminescence (TRPL), and theoretical simulations, demonstrating that the differences in temperature-dependent carrier lifetime related to CsPbX3 (X = Br, I) perovskite composition are due to the changes in the bandgap structure. TRPL, theoretical analyses, and X-ray radiation measurements reveal that the high response of the UV/visible-blind yellow-phase CsPbI3 under high-energy X-ray exposure is attributed to the nature of the indirect bandgap structure of CsPbX3. The yellow-phase CsPbI3-based X-ray detector achieves a relatively high sensitivity of 83.6 μCGyair−1 cm−2 (under 1.7 mGyair s−1 at an electron field of 0.17 V μm−1 used for medical diagnostics) although the active layer is based solely on an ultrathin (≈6.6 μm) CsPbI3 nanocrystal film, exceeding the values obtained for commercial X-ray detectors, and further confirming good material quality. This CsPbX3 X-ray detector is sufficient for cost-effective device miniaturization based on a simple design.
    Citation
    Xin, B., Alaal, N., Mitra, S., Subahi, A., Pak, Y., Almalawi, D., … Roqan, I. S. (2020). Identifying Carrier Behavior in Ultrathin Indirect-Bandgap CsPbX3 Nanocrystal Films for Use in UV/Visible-Blind High-Energy Detectors. Small, 2004513. doi:10.1002/smll.202004513
    Sponsors
    This work was financially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding (BAS/1/1319-01-01). The authors thank the KAUST Medical Center (KMC) located at the KAUST campus for providing their X-ray facilities for carrying out the measurements.
    Publisher
    Wiley
    Journal
    Small
    DOI
    10.1002/smll.202004513
    Additional Links
    https://onlinelibrary.wiley.com/doi/10.1002/smll.202004513
    ae974a485f413a2113503eed53cd6c53
    10.1002/smll.202004513
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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