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dc.contributor.authorZhuang, Zhe
dc.contributor.authorIida, Daisuke
dc.contributor.authorOhkawa, Kazuhiro
dc.date.accessioned2020-09-29T10:04:57Z
dc.date.available2020-09-29T10:04:57Z
dc.date.issued2020-09-28
dc.date.submitted2020-07-20
dc.identifier.citationZhuang, Z., Iida, D., & Ohkawa, K. (2020). Enhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodes. Optics Express, 28(21), 30423. doi:10.1364/oe.403168
dc.identifier.issn1094-4087
dc.identifier.doi10.1364/oe.403168
dc.identifier.urihttp://hdl.handle.net/10754/665351
dc.description.abstractWe numerically investigated the performance of N-polar AlGaN-based ultraviolet (UV) light-emitting diodes (LEDs) with different Al contents in quantum wells (QWs) and barriers. We found that N-polar structures could improve the maximum internal quantum efficiency (IQE) and suppress the efficiency droop, especially for deep-UV LEDs. Compared to metal-polar LEDs, N-polar ones retained higher IQE values even when the acceptor concentrations in the p-layers were one order of magnitude lower. The enhanced performance originated from the higher injection efficiencies of N-polar structures in terms of efficient carrier injection into QWs and suppressed electron overflow at high current densities
dc.description.sponsorshipKing Abdullah University of Science and Technology (BAS/1/1676-01-01).
dc.publisherThe Optical Society
dc.relation.urlhttps://www.osapublishing.org/abstract.cfm?URI=oe-28-21-30423
dc.rights© 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
dc.rights.uriOSA Open Access Publishing Agreement
dc.titleEnhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodes
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.identifier.journalOptics Express
dc.eprint.versionPublisher's Version/PDF
dc.identifier.volume28
dc.identifier.issue21
dc.identifier.pages30423
kaust.personZhuang, Zhe
kaust.personIida, Daisuke
kaust.personOhkawa, Kazuhiro
kaust.grant.numberBAS/1/1676-01-01
dc.date.accepted2020-09-19
refterms.dateFOA2020-09-29T10:08:21Z
dc.date.published-online2020-09-28
dc.date.published-print2020-10-12


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