Enhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodes
Type
ArticleAuthors
Zhuang, Zhe
Iida, Daisuke

Ohkawa, Kazuhiro

KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
KAUST Grant Number
BAS/1/1676-01-01Date
2020-09-28Online Publication Date
2020-09-28Print Publication Date
2020-10-12Submitted Date
2020-07-20Permanent link to this record
http://hdl.handle.net/10754/665351
Metadata
Show full item recordAbstract
We numerically investigated the performance of N-polar AlGaN-based ultraviolet (UV) light-emitting diodes (LEDs) with different Al contents in quantum wells (QWs) and barriers. We found that N-polar structures could improve the maximum internal quantum efficiency (IQE) and suppress the efficiency droop, especially for deep-UV LEDs. Compared to metal-polar LEDs, N-polar ones retained higher IQE values even when the acceptor concentrations in the p-layers were one order of magnitude lower. The enhanced performance originated from the higher injection efficiencies of N-polar structures in terms of efficient carrier injection into QWs and suppressed electron overflow at high current densitiesCitation
Zhuang, Z., Iida, D., & Ohkawa, K. (2020). Enhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodes. Optics Express, 28(21), 30423. doi:10.1364/oe.403168Sponsors
King Abdullah University of Science and Technology (BAS/1/1676-01-01).Publisher
The Optical SocietyJournal
Optics ExpressAdditional Links
https://www.osapublishing.org/abstract.cfm?URI=oe-28-21-30423ae974a485f413a2113503eed53cd6c53
10.1364/oe.403168