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    Enhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodes

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    enhanced performance.pdf
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    Type
    Article
    Authors
    Zhuang, Zhe cc
    Iida, Daisuke cc
    Ohkawa, Kazuhiro cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    KAUST Grant Number
    BAS/1/1676-01-01
    Date
    2020-09-28
    Online Publication Date
    2020-09-28
    Print Publication Date
    2020-10-12
    Submitted Date
    2020-07-20
    Permanent link to this record
    http://hdl.handle.net/10754/665351
    
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    Abstract
    We numerically investigated the performance of N-polar AlGaN-based ultraviolet (UV) light-emitting diodes (LEDs) with different Al contents in quantum wells (QWs) and barriers. We found that N-polar structures could improve the maximum internal quantum efficiency (IQE) and suppress the efficiency droop, especially for deep-UV LEDs. Compared to metal-polar LEDs, N-polar ones retained higher IQE values even when the acceptor concentrations in the p-layers were one order of magnitude lower. The enhanced performance originated from the higher injection efficiencies of N-polar structures in terms of efficient carrier injection into QWs and suppressed electron overflow at high current densities
    Citation
    Zhuang, Z., Iida, D., & Ohkawa, K. (2020). Enhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodes. Optics Express, 28(21), 30423. doi:10.1364/oe.403168
    Sponsors
    King Abdullah University of Science and Technology (BAS/1/1676-01-01).
    Publisher
    The Optical Society
    Journal
    Optics Express
    DOI
    10.1364/oe.403168
    Additional Links
    https://www.osapublishing.org/abstract.cfm?URI=oe-28-21-30423
    ae974a485f413a2113503eed53cd6c53
    10.1364/oe.403168
    Scopus Count
    Collections
    Articles; Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

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