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dc.contributor.authorShi, Xiaohui
dc.contributor.authorMi, Wenbo
dc.contributor.authorZhang, Qiang
dc.contributor.authorZhang, Xixiang
dc.date.accessioned2020-09-29T06:52:27Z
dc.date.available2020-09-29T06:52:27Z
dc.date.issued2020-09-28
dc.date.submitted2020-06-21
dc.identifier.citationShi, X., Mi, W., Zhang, Q., & Zhang, X. (2020). Bending strain tailored exchange bias in epitaxial NiMn/γ′-Fe4N bilayers. Applied Physics Letters, 117(13), 132401. doi:10.1063/5.0018261
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.doi10.1063/5.0018261
dc.identifier.urihttp://hdl.handle.net/10754/665349
dc.description.abstractThe strain tunable exchange bias has attracted much attention due to its practical applications in flexible and wearable spintronic devices. Here, the flexible epitaxial NiMn/c0-Fe4N bilayers are deposited by facing-target reactive sputtering. The maximum strain-induced change ratios of exchange bias field HEB and coercivity HC (jDHEB/HEBj and jDHC/HCj) are 51% and 22%, respectively. A large strain-induced jDHEB/HEBj appears in a thicker ferromagnetic layer, but a large jDHC/HCj) appears in a thinner ferromagnetic layer. At a compressive strain, the antiferromagnetic anisotropy of the tetragonal NiMn layer increases, resulting in an increased HC of NiMn/c0-Fe4N bilayers. The bending-strain induced changes of anisotropy magnetoresistance and planar Hall resistance are also observed at low magnetic fields. The bending-strain tailored magnetic properties can be ascribed to the distributions of ferromagnetic and antiferromagnetic anisotropies.
dc.publisherAIP Publishing
dc.relation.urlhttp://aip.scitation.org/doi/10.1063/5.0018261
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied Physics Letters and may be found at http://doi.org/10.1063/5.0018261.
dc.rights.uriPublished under license by AIP Publishing
dc.titleBending strain tailored exchange bias in epitaxial NiMn/γ′-Fe4N bilayers
dc.typeArticle
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentNanofabrication Core Lab
dc.contributor.departmentThin Films & Characterization
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentMaterial Science and Engineering Program
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionTianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China
dc.contributor.institutionCore Technology Platforms, New York University Abu Dhabi, P.O. Box 129188, Abu Dhabi, United Arab Emirates
dc.identifier.volume117
dc.identifier.issue13
dc.identifier.pages132401
kaust.personZhang, Qiang
kaust.personZhang, Xixiang
dc.date.accepted2020-09-11
refterms.dateFOA2020-09-29T06:53:23Z


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