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    Bending strain tailored exchange bias in epitaxial NiMn/γ′-Fe4N bilayers

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    Type
    Article
    Authors
    Shi, Xiaohui
    Mi, Wenbo cc
    Zhang, Qiang cc
    Zhang, Xixiang cc
    KAUST Department
    Imaging and Characterization Core Lab
    Nanofabrication Core Lab
    Thin Films & Characterization
    Physical Science and Engineering (PSE) Division
    Material Science and Engineering Program
    Date
    2020-09-28
    Submitted Date
    2020-06-21
    Permanent link to this record
    http://hdl.handle.net/10754/665349
    
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    Abstract
    The strain tunable exchange bias has attracted much attention due to its practical applications in flexible and wearable spintronic devices. Here, the flexible epitaxial NiMn/c0-Fe4N bilayers are deposited by facing-target reactive sputtering. The maximum strain-induced change ratios of exchange bias field HEB and coercivity HC (jDHEB/HEBj and jDHC/HCj) are 51% and 22%, respectively. A large strain-induced jDHEB/HEBj appears in a thicker ferromagnetic layer, but a large jDHC/HCj) appears in a thinner ferromagnetic layer. At a compressive strain, the antiferromagnetic anisotropy of the tetragonal NiMn layer increases, resulting in an increased HC of NiMn/c0-Fe4N bilayers. The bending-strain induced changes of anisotropy magnetoresistance and planar Hall resistance are also observed at low magnetic fields. The bending-strain tailored magnetic properties can be ascribed to the distributions of ferromagnetic and antiferromagnetic anisotropies.
    Citation
    Shi, X., Mi, W., Zhang, Q., & Zhang, X. (2020). Bending strain tailored exchange bias in epitaxial NiMn/γ′-Fe4N bilayers. Applied Physics Letters, 117(13), 132401. doi:10.1063/5.0018261
    Publisher
    AIP Publishing
    Journal
    Applied Physics Letters
    DOI
    10.1063/5.0018261
    Additional Links
    http://aip.scitation.org/doi/10.1063/5.0018261
    ae974a485f413a2113503eed53cd6c53
    10.1063/5.0018261
    Scopus Count
    Collections
    Nanofabrication Core Lab; Articles; Imaging and Characterization Core Lab; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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