Bending strain tailored exchange bias in epitaxial NiMn/γ′-Fe4N bilayers
Type
ArticleKAUST Department
Imaging and Characterization Core LabNanofabrication Core Lab
Thin Films & Characterization
Physical Science and Engineering (PSE) Division
Material Science and Engineering Program
Date
2020-09-28Submitted Date
2020-06-21Permanent link to this record
http://hdl.handle.net/10754/665349
Metadata
Show full item recordAbstract
The strain tunable exchange bias has attracted much attention due to its practical applications in flexible and wearable spintronic devices. Here, the flexible epitaxial NiMn/c0-Fe4N bilayers are deposited by facing-target reactive sputtering. The maximum strain-induced change ratios of exchange bias field HEB and coercivity HC (jDHEB/HEBj and jDHC/HCj) are 51% and 22%, respectively. A large strain-induced jDHEB/HEBj appears in a thicker ferromagnetic layer, but a large jDHC/HCj) appears in a thinner ferromagnetic layer. At a compressive strain, the antiferromagnetic anisotropy of the tetragonal NiMn layer increases, resulting in an increased HC of NiMn/c0-Fe4N bilayers. The bending-strain induced changes of anisotropy magnetoresistance and planar Hall resistance are also observed at low magnetic fields. The bending-strain tailored magnetic properties can be ascribed to the distributions of ferromagnetic and antiferromagnetic anisotropies.Citation
Shi, X., Mi, W., Zhang, Q., & Zhang, X. (2020). Bending strain tailored exchange bias in epitaxial NiMn/γ′-Fe4N bilayers. Applied Physics Letters, 117(13), 132401. doi:10.1063/5.0018261Publisher
AIP PublishingJournal
Applied Physics LettersAdditional Links
http://aip.scitation.org/doi/10.1063/5.0018261ae974a485f413a2113503eed53cd6c53
10.1063/5.0018261