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dc.contributor.authorLee, Kwangjae
dc.contributor.authorMin, Jung-Wook
dc.contributor.authorTuredi, Bekir
dc.contributor.authorAlsalloum, Abdullah Yousef
dc.contributor.authorMin, Jung-Hong
dc.contributor.authorKim, Yeong Jae
dc.contributor.authorYoo, Young Jin
dc.contributor.authorOh, Semi
dc.contributor.authorCho, Namchul
dc.contributor.authorSubedi, Ram Chandra
dc.contributor.authorMitra, Somak
dc.contributor.authorYoon, Sang Eun
dc.contributor.authorKim, Jong Hyun
dc.contributor.authorPark, Kwangwook
dc.contributor.authorChung, Tae-Hoon
dc.contributor.authorJung, Sung Hoon
dc.contributor.authorBaek, Jong-Hyeob
dc.contributor.authorSong, Young Min
dc.contributor.authorRoqan, Iman S.
dc.contributor.authorNg, Tien Khee
dc.contributor.authorOoi, Boon S.
dc.contributor.authorBakr, Osman
dc.date.accessioned2020-09-29T05:03:56Z
dc.date.available2020-09-29T05:03:56Z
dc.date.issued2020-09-17
dc.identifier.citationLee, K. J., Min, J.-W., Turedi, B., Alsalloum, A. Y., Min, J.-H., Kim, Y. J., … Bakr, O. M. (2020). Nanoporous GaN/n-type GaN: a cathode structure for ITO-free perovskite solar cells. ACS Energy Letters. doi:10.1021/acsenergylett.0c01621
dc.identifier.issn2380-8195
dc.identifier.issn2380-8195
dc.identifier.doi10.1021/acsenergylett.0c01621
dc.identifier.urihttp://hdl.handle.net/10754/665346
dc.description.abstractIntroducing suitable electron/hole transport layers and transparent conductive layers (TCLs) into perovskite solar cells (PSCs) is key to enhancing the selective extraction of charge carriers and reducing surface recombination losses. Here, we introduce nanoporous gallium nitride (NP GaN)/n-type GaN (n-GaN) as a dual-function cathode structure for PSCs, acting as both the TCL and the electron transport layer (ETL). We demonstrate that the hierarchical NP GaN structure provides an expanded interfacial contact area with the perovskite absorber, while the n-GaN under the NP GaN displays high transmittance in the visible spectrum as well as higher lateral electric conductivity than that of a conventional ITO film. Prototype MAPbI3 PSCs based on this NP GaN/n-GaN cathode structure (without an extra ETL) show a power conversion efficiency of up to 18.79%. The NP GaN/n-GaN platform demonstrated herein paves the way for PSCs to take advantage of the widely available heterostructures of mature III-nitride-based technologies.
dc.description.sponsorshipThe authors gratefully acknowledge the financial support provided by King Abdullah University of Science and Technology (KAUST).
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttps://pubs.acs.org/doi/10.1021/acsenergylett.0c01621
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Energy Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsenergylett.0c01621.
dc.titleNanoporous GaN/n-type GaN: a cathode structure for ITO-free perovskite solar cells
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentFunctional Nanomaterials Lab (FuNL)
dc.contributor.departmentKAUST Catalysis Center (KCC)
dc.contributor.departmentKAUST Catalyst Center (KCC).
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhotonics Laboratory
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentSemiconductor and Material Spectroscopy (SMS) Laboratory
dc.identifier.journalACS Energy Letters
dc.rights.embargodate2021-09-17
dc.eprint.versionPost-print
dc.contributor.institutionSchool of Electrical Engineering and Computer Science and School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea.
dc.contributor.institutionDepartment of Energy Systems Engineering, Soonchunhyang University, Asan 31538, Republic of Korea.
dc.contributor.institutionLight Source Research Division, Korea Photonics Technology Institute (KOPTI), Gwangju 61007, Republic of Korea.
dc.contributor.institutionDepartment of Molecular Science and Technology, Ajou University, Suwon 16499, Republic of Korea.
dc.contributor.institutionDivision of Advanced Materials Engineering, Jeonbuk National University, Jeonju 54896, Republic of Korea.
kaust.personLee, Kwangjae
kaust.personLee, Kwangjae
kaust.personMin, Jung-Wook
kaust.personTuredi, Bekir
kaust.personTuredi, Bekir
kaust.personAlsalloum, Abdullah Yousef
kaust.personAlsalloum, Abdullah Yousef
kaust.personMin, Jung-Hong
kaust.personSubedi, Ram
kaust.personMitra, Somak
kaust.personRoqan, Iman S.
kaust.personNg, Tien Khee
kaust.personOoi, Boon S.
kaust.personBakr, Osman M.
kaust.personBakr, Osman M.
refterms.dateFOA2020-09-29T05:39:16Z
dc.date.published-online2020-09-17
dc.date.published-print2020-10-09


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