Nanoporous GaN/n-type GaN: a cathode structure for ITO-free perovskite solar cells
Type
ArticleAuthors
Lee, KwangjaeMin, Jung-Wook
Turedi, Bekir

Alsalloum, Abdullah Yousef
Min, Jung-Hong
Kim, Yeong Jae
Yoo, Young Jin
Oh, Semi
Cho, Namchul
Subedi, Ram Chandra

Mitra, Somak

Yoon, Sang Eun
Kim, Jong Hyun
Park, Kwangwook
Chung, Tae-Hoon
Jung, Sung Hoon
Baek, Jong-Hyeob
Song, Young Min
Roqan, Iman S.

Ng, Tien Khee

Ooi, Boon S.

Bakr, Osman

KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Functional Nanomaterials Lab (FuNL)
KAUST Catalysis Center (KCC)
KAUST Catalyst Center (KCC).
KAUST Solar Center (KSC)
Material Science and Engineering Program
Photonics Laboratory
Physical Science and Engineering (PSE) Division
Semiconductor and Material Spectroscopy (SMS) Laboratory
Date
2020-09-17Online Publication Date
2020-09-17Print Publication Date
2020-10-09Embargo End Date
2021-09-17Permanent link to this record
http://hdl.handle.net/10754/665346
Metadata
Show full item recordAbstract
Introducing suitable electron/hole transport layers and transparent conductive layers (TCLs) into perovskite solar cells (PSCs) is key to enhancing the selective extraction of charge carriers and reducing surface recombination losses. Here, we introduce nanoporous gallium nitride (NP GaN)/n-type GaN (n-GaN) as a dual-function cathode structure for PSCs, acting as both the TCL and the electron transport layer (ETL). We demonstrate that the hierarchical NP GaN structure provides an expanded interfacial contact area with the perovskite absorber, while the n-GaN under the NP GaN displays high transmittance in the visible spectrum as well as higher lateral electric conductivity than that of a conventional ITO film. Prototype MAPbI3 PSCs based on this NP GaN/n-GaN cathode structure (without an extra ETL) show a power conversion efficiency of up to 18.79%. The NP GaN/n-GaN platform demonstrated herein paves the way for PSCs to take advantage of the widely available heterostructures of mature III-nitride-based technologies.Citation
Lee, K. J., Min, J.-W., Turedi, B., Alsalloum, A. Y., Min, J.-H., Kim, Y. J., … Bakr, O. M. (2020). Nanoporous GaN/n-type GaN: a cathode structure for ITO-free perovskite solar cells. ACS Energy Letters. doi:10.1021/acsenergylett.0c01621Sponsors
The authors gratefully acknowledge the financial support provided by King Abdullah University of Science and Technology (KAUST).Publisher
American Chemical Society (ACS)Journal
ACS Energy LettersAdditional Links
https://pubs.acs.org/doi/10.1021/acsenergylett.0c01621ae974a485f413a2113503eed53cd6c53
10.1021/acsenergylett.0c01621