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dc.contributor.authorWei, Binbin
dc.contributor.authorMing, Fangwang
dc.contributor.authorLiang, Hanfeng
dc.contributor.authorQi, Zhengbing
dc.contributor.authorHu, Wenshen
dc.contributor.authorWang, Zhoucheng
dc.date.accessioned2020-09-20T12:14:07Z
dc.date.available2020-09-20T12:14:07Z
dc.date.issued2020-09-10
dc.date.submitted2019-06-10
dc.identifier.citationWei, B., Ming, F., Liang, H., Qi, Z., Hu, W., & Wang, Z. (2021). All nitride asymmetric supercapacitors of niobium titanium nitride-vanadium nitride. Journal of Power Sources, 481, 228842. doi:10.1016/j.jpowsour.2020.228842
dc.identifier.issn0378-7753
dc.identifier.doi10.1016/j.jpowsour.2020.228842
dc.identifier.urihttp://hdl.handle.net/10754/665241
dc.description.abstractMetal nitrides are potential electrode materials for supercapacitors because of their high conductivity, high capacitance and good corrosion resistance. Herein, we present a general strategy to prepare self-standing bimetallic nitride thin film nanostructures using magnetron co-sputtering and further to boost their electrochemical performance for supercapacitors. Using niobium titanium nitride (TiNbN) as an example, we show that the synergy of Ti and Nb greatly boosts the capacitive performance to a high specific capacitance of up to 59.3 mF cm−2 at 1.0 mA cm−2, along with outstanding cycling stability for at least 20000 cycles. We further demonstrate an all metal nitride based asymmetric device by combing TiNbN with a vanadium nitride (VN) negative electrode. The asymmetric device operates at a voltage window of 1.6 V and achieves a maximum energy density 74.9 mWh cm−3 at a power density of 8.8 W cm−3. Our work not only presents a first demonstration of employing TiNbN as supercapacitor electrode material, but also opens up new possibility for the rational construction of all nitride based high performance asymmetric supercapacitors.
dc.description.sponsorshipThis research is financially supported by the National Natural Science Foundation of China (No. 51372212, 51601163).
dc.publisherElsevier BV
dc.relation.urlhttps://linkinghub.elsevier.com/retrieve/pii/S0378775320311460
dc.rightsNOTICE: this is the author’s version of a work that was accepted for publication in Journal of Power Sources. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Journal of Power Sources, [481, , (2020-09-10)] DOI: 10.1016/j.jpowsour.2020.228842 . © 2020. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.titleAll nitride asymmetric supercapacitors of niobium titanium nitride-vanadium nitride
dc.typeArticle
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalJournal of Power Sources
dc.rights.embargodate2022-09-10
dc.eprint.versionPost-print
dc.contributor.institutionCollege of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China
dc.contributor.institutionKey Laboratory of Functional Materials and Applications of Fujian Province, School of Materials Science and Engineering, Xiamen University of Technology, Xiamen 361024, China
dc.identifier.volume481
dc.identifier.pages228842
kaust.personMing, Fangwang
kaust.personLiang, Hanfeng
dc.date.accepted2020-08-21
dc.identifier.eid2-s2.0-85090783579
dc.date.published-online2020-09-10
dc.date.published-print2021-01


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