Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides
Naphade, Dipti R.
Anthopoulos, Thomas D.
KAUST DepartmentMaterial Science and Engineering Program
Physical Science and Engineering (PSE) Division
Material Science and Engineering
Physical Sciences and Engineering Division, KAUST Solar Centre, King Abdullah University of Science and Technology (KAUST), Thuwal, Kingdom of Saudi Arabia
KAUST Solar Center (KSC)
KAUST Catalysis Center (KCC)
KAUST Grant NumberOSR-2018-CARF/CCF-3079
Online Publication Date2020-09-07
Print Publication Date2020-12
Embargo End Date2021-03-07
Permanent link to this recordhttp://hdl.handle.net/10754/665096
MetadataShow full item record
AbstractTwo-dimensional transition metal dichalcogenide nanoribbons are touted as the future extreme device downscaling for advanced logic and memory devices but remain a formidable synthetic challenge. Here, we demonstrate a ledge-directed epitaxy (LDE) of dense arrays of continuous, self-aligned, monolayer and single-crystalline MoS2 nanoribbons on β-gallium (iii) oxide (β-Ga2O3) (100) substrates. LDE MoS2 nanoribbons have spatial uniformity over a long range and transport characteristics on par with those seen in exfoliated benchmarks. Prototype MoS2-nanoribbon-based field-effect transistors exhibit high on/off ratios of 108 and an averaged room temperature electron mobility of 65 cm2 V−1 s−1. The MoS2 nanoribbons can be readily transferred to arbitrary substrates while the underlying β-Ga2O3 can be reused after mechanical exfoliation. We further demonstrate LDE as a versatile epitaxy platform for the growth of p-type WSe2 nanoribbons and lateral heterostructures made of p-WSe2 and n-MoS2 nanoribbons for futuristic electronics applications.
CitationAljarb, A., Fu, J.-H., Hsu, C.-C., Chuu, C.-P., Wan, Y., Hakami, M., … Tung, V. (2020). Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides. Nature Materials. doi:10.1038/s41563-020-0795-4
SponsorsV.T. and J.-H.F. are indebted to the support from the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under award no. OSR-2018-CARF/CCF-3079. V.T. acknowledges support from the KAUST Catalysis Center (KCC) and physical science division. C.P.C., T.-A.C., M.-Y.L. and L.-J.L. thank the Taiwan Semiconductor Manufacturing Company (TSMC). W.-H.C. acknowledges support from the Ministry of Science and Technology of Taiwan (MOST-108-2119-M-009-011-MY3, MOST-107-2112-M-009-024-MY3) and from the CEFMS of National Chiao Tung University supported by the Ministry of Education of Taiwan. V.T. and A.A. thank C.-H. Lien and L. Cavallo for their support; H.-L. Tang; M.-H. Chiu; and C.-C. Tseng for assistance with device architecture and CVD.
PublisherSpringer Science and Business Media LLC
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