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    Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides

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    Embargo End Date:
    2021-03-07
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    Type
    Article
    Authors
    Aljarb, Areej
    Fu, Jui-Han
    Hsu, Chih-Chan
    Chuu, Chih-Piao
    Wan, Yi cc
    Hakami, Mariam
    Naphade, Dipti R.
    Yengel, Emre cc
    Lee, Chien-Ju
    Brems, Steven
    Chen, Tse-An
    Li, Ming-Yang
    Bae, Sang-Hoon
    Hsu, Wei-Ting
    Cao, Zhen
    Albaridy, Rehab
    Lopatin, Sergei cc
    Chang, Wen-Hao cc
    Anthopoulos, Thomas D. cc
    Kim, Jeehwan cc
    Li, Lain-Jong cc
    Tung, Vincent cc
    KAUST Department
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Material Science and Engineering
    Physical Sciences and Engineering Division, KAUST Solar Centre, King Abdullah University of Science and Technology (KAUST), Thuwal, Kingdom of Saudi Arabia
    KAUST Solar Center (KSC)
    KAUST Catalysis Center (KCC)
    Electron Microscopy
    KAUST Grant Number
    OSR-2018-CARF/CCF-3079
    Date
    2020-09-07
    Online Publication Date
    2020-09-07
    Print Publication Date
    2020-12
    Embargo End Date
    2021-03-07
    Submitted Date
    2020-05-21
    Permanent link to this record
    http://hdl.handle.net/10754/665096
    
    Metadata
    Show full item record
    Abstract
    Two-dimensional transition metal dichalcogenide nanoribbons are touted as the future extreme device downscaling for advanced logic and memory devices but remain a formidable synthetic challenge. Here, we demonstrate a ledge-directed epitaxy (LDE) of dense arrays of continuous, self-aligned, monolayer and single-crystalline MoS2 nanoribbons on β-gallium (iii) oxide (β-Ga2O3) (100) substrates. LDE MoS2 nanoribbons have spatial uniformity over a long range and transport characteristics on par with those seen in exfoliated benchmarks. Prototype MoS2-nanoribbon-based field-effect transistors exhibit high on/off ratios of 108 and an averaged room temperature electron mobility of 65 cm2 V−1 s−1. The MoS2 nanoribbons can be readily transferred to arbitrary substrates while the underlying β-Ga2O3 can be reused after mechanical exfoliation. We further demonstrate LDE as a versatile epitaxy platform for the growth of p-type WSe2 nanoribbons and lateral heterostructures made of p-WSe2 and n-MoS2 nanoribbons for futuristic electronics applications.
    Citation
    Aljarb, A., Fu, J.-H., Hsu, C.-C., Chuu, C.-P., Wan, Y., Hakami, M., … Tung, V. (2020). Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides. Nature Materials. doi:10.1038/s41563-020-0795-4
    Sponsors
    V.T. and J.-H.F. are indebted to the support from the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under award no. OSR-2018-CARF/CCF-3079. V.T. acknowledges support from the KAUST Catalysis Center (KCC) and physical science division. C.P.C., T.-A.C., M.-Y.L. and L.-J.L. thank the Taiwan Semiconductor Manufacturing Company (TSMC). W.-H.C. acknowledges support from the Ministry of Science and Technology of Taiwan (MOST-108-2119-M-009-011-MY3, MOST-107-2112-M-009-024-MY3) and from the CEFMS of National Chiao Tung University supported by the Ministry of Education of Taiwan. V.T. and A.A. thank C.-H. Lien and L. Cavallo for their support; H.-L. Tang; M.-H. Chiu; and C.-C. Tseng for assistance with device architecture and CVD.
    Publisher
    Springer Science and Business Media LLC
    Journal
    Nature Materials
    DOI
    10.1038/s41563-020-0795-4
    PubMed ID
    32895505
    Additional Links
    http://www.nature.com/articles/s41563-020-0795-4
    ae974a485f413a2113503eed53cd6c53
    10.1038/s41563-020-0795-4
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program; KAUST Catalysis Center (KCC); KAUST Solar Center (KSC)

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