Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides
Type
ArticleAuthors
Aljarb, AreejFu, Jui-Han
Hsu, Chih-Chan
Chuu, Chih-Piao
Wan, Yi

Hakami, Mariam
Naphade, Dipti R.
Yengel, Emre

Lee, Chien-Ju
Brems, Steven
Chen, Tse-An
Li, Ming-Yang
Bae, Sang-Hoon
Hsu, Wei-Ting
Cao, Zhen
Albaridy, Rehab
Lopatin, Sergei

Chang, Wen-Hao

Anthopoulos, Thomas D.

Kim, Jeehwan

Li, Lain-Jong

Tung, Vincent

KAUST Department
Material Science and Engineering ProgramPhysical Science and Engineering (PSE) Division
Material Science and Engineering
Physical Sciences and Engineering Division, KAUST Solar Centre, King Abdullah University of Science and Technology (KAUST), Thuwal, Kingdom of Saudi Arabia
KAUST Solar Center (KSC)
KAUST Catalysis Center (KCC)
Electron Microscopy
KAUST Grant Number
OSR-2018-CARF/CCF-3079Date
2020-09-07Online Publication Date
2020-09-07Print Publication Date
2020-12Embargo End Date
2021-03-07Submitted Date
2020-05-21Permanent link to this record
http://hdl.handle.net/10754/665096
Metadata
Show full item recordAbstract
Two-dimensional transition metal dichalcogenide nanoribbons are touted as the future extreme device downscaling for advanced logic and memory devices but remain a formidable synthetic challenge. Here, we demonstrate a ledge-directed epitaxy (LDE) of dense arrays of continuous, self-aligned, monolayer and single-crystalline MoS2 nanoribbons on β-gallium (iii) oxide (β-Ga2O3) (100) substrates. LDE MoS2 nanoribbons have spatial uniformity over a long range and transport characteristics on par with those seen in exfoliated benchmarks. Prototype MoS2-nanoribbon-based field-effect transistors exhibit high on/off ratios of 108 and an averaged room temperature electron mobility of 65 cm2 V−1 s−1. The MoS2 nanoribbons can be readily transferred to arbitrary substrates while the underlying β-Ga2O3 can be reused after mechanical exfoliation. We further demonstrate LDE as a versatile epitaxy platform for the growth of p-type WSe2 nanoribbons and lateral heterostructures made of p-WSe2 and n-MoS2 nanoribbons for futuristic electronics applications.Citation
Aljarb, A., Fu, J.-H., Hsu, C.-C., Chuu, C.-P., Wan, Y., Hakami, M., … Tung, V. (2020). Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides. Nature Materials. doi:10.1038/s41563-020-0795-4Sponsors
V.T. and J.-H.F. are indebted to the support from the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under award no. OSR-2018-CARF/CCF-3079. V.T. acknowledges support from the KAUST Catalysis Center (KCC) and physical science division. C.P.C., T.-A.C., M.-Y.L. and L.-J.L. thank the Taiwan Semiconductor Manufacturing Company (TSMC). W.-H.C. acknowledges support from the Ministry of Science and Technology of Taiwan (MOST-108-2119-M-009-011-MY3, MOST-107-2112-M-009-024-MY3) and from the CEFMS of National Chiao Tung University supported by the Ministry of Education of Taiwan. V.T. and A.A. thank C.-H. Lien and L. Cavallo for their support; H.-L. Tang; M.-H. Chiu; and C.-C. Tseng for assistance with device architecture and CVD.Publisher
Springer Science and Business Media LLCJournal
Nature MaterialsPubMed ID
32895505Additional Links
http://www.nature.com/articles/s41563-020-0795-4ae974a485f413a2113503eed53cd6c53
10.1038/s41563-020-0795-4
Scopus Count
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