Show simple item record

dc.contributor.authorHolovský, Jakub
dc.contributor.authorMartín De Nicolás, Silvia
dc.contributor.authorDe Wolf, Stefaan
dc.contributor.authorBallif, Christophe
dc.date.accessioned2020-09-06T07:56:27Z
dc.date.available2020-09-06T07:56:27Z
dc.date.issued2020-08-26
dc.date.submitted2020-05-28
dc.identifier.citationHolovský, J., Martín De Nicolás, S., De Wolf, S., & Ballif, C. (2020). Amorphous/Crystalline Silicon Interface Stability: Correlation between Infrared Spectroscopy and Electronic Passivation Properties. Advanced Materials Interfaces, 2000957. doi:10.1002/admi.202000957
dc.identifier.issn2196-7350
dc.identifier.issn2196-7350
dc.identifier.doi10.1002/admi.202000957
dc.identifier.urihttp://hdl.handle.net/10754/664932
dc.description.abstractUltrathin layers of hydrogenated amorphous silicon (a-Si:H), passivating the surface of crystalline silicon (c-Si), are key enablers for high-efficiency silicon heterojunction solar cells. In this work, the authors apply highly sensitive attenuated total reflectance Fourier-transform infrared spectroscopy, combined with carrier-lifetime measurements and carrier-lifetime imaging, to resolve several fundamental and technology-related questions related to the a-Si:H/c-Si interface. To gain insight, the a-Si:H/c-Si interfacial morphology is intentionally manipulated by applying different surface, annealing and ageing treatments. Changes are observed in the vibrational modes of hydrides (SiHX), oxides (SiHX(SiYOZ)) together with hydroxyl and hydrocarbon surface groups. The effect of unintentional oxidation and contamination is considered as well. Electronic interfacial properties are reviewed and discussed of hydrogen mono-layer passivation of the c-Si surface and from the perspectives of a-Si:H bulk properties. It is found that both models have severe limitations and suggest that a new physical model of the interface, considering both is required.
dc.description.sponsorshipThis research was funded by Swiss SCIEX-NMSch fellowship (Grant No. 11.223), by Czech Science Foundation (Grant No. 18-24268S), and Czech Ministry of Education, Youth and Sports (Grant Nos. CZ. 02.1.01/0.0/0.0/15_003/0000464−“Centre of Advanced Photovoltaics”, and CZ.02.1.01/0.0/0.0/16_019/0000760–“SOLID21”. The authors gratefully acknowledge the help of Johannes Seif and Loris Barraud from Photovoltaic and Thin-Film Electronics Laboratory at EPFL.
dc.publisherWiley
dc.relation.urlhttps://onlinelibrary.wiley.com/doi/abs/10.1002/admi.202000957
dc.rightsArchived with thanks to Advanced Materials Interfaces
dc.titleAmorphous/Crystalline Silicon Interface Stability: Correlation between Infrared Spectroscopy and Electronic Passivation Properties
dc.typeArticle
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentKAUST Solar Center (KSC)
dc.identifier.journalAdvanced Materials Interfaces
dc.rights.embargodate2021-08-27
dc.eprint.versionPost-print
dc.contributor.institutionCentre for Advanced PhotovoltaicsFEE, CTU in Prague Technická 2 Prague 166 27 Czech Republic
dc.contributor.institutionInstitute of Physics of the Czech Academy of Sciences Cukrovarnická 10 Prague 162 00 Czech Republic
dc.contributor.institutionInstitute of Microengineering (IMT)Photovoltaic and Thin-Film Electronics LaboratoryÉcole Polytechnique Fédérale de Lausanne (EPFL) Rue de la Maladière 71b Neuchâtel 2002 Switzerland
dc.contributor.institutionCSEM PV-Center Jaquet-Droz 1 Neuchâtel 2002 Switzerland
dc.identifier.pages2000957
kaust.personDe Wolf, Stefaan
dc.date.accepted2020-07-04
dc.identifier.eid2-s2.0-85089867676
dc.date.published-online2020-08-26
dc.date.published-print2020-10


This item appears in the following Collection(s)

Show simple item record