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dc.contributor.authorTran, Tinh Binh
dc.contributor.authorLiao, Che-Hao
dc.contributor.authorAlQatari, Feras S.
dc.contributor.authorLi, Xiaohang
dc.date.accessioned2020-09-06T07:47:54Z
dc.date.available2020-09-06T07:47:54Z
dc.date.issued2020-08-27
dc.date.submitted2020-06-26
dc.identifier.citationTran, T. B., Liao, C.-H., AlQatari, F., & Li, X. (2020). Demonstration of single-phase wurtzite BAlN with over 20% boron content by metalorganic chemical vapor deposition. Applied Physics Letters, 117(8), 082102. doi:10.1063/5.0019881
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.doi10.1063/5.0019881
dc.identifier.urihttp://hdl.handle.net/10754/664931
dc.description.abstractWurtzite BAlN alloys are emerging ultrawide bandgap III-nitride semiconductors promising for optical and electronic devices. Yet the boron compositions of the grown alloys have been limited. In this Letter, we report on the demonstration of a thick single-phase wurtzite BAlN film with a boron composition over 20%. The growth was conducted at 1010 C and 150 Torr with continuous flows of group-III precursors and ammonia with a growth rate of 2.2 lm/h by metalorganic chemical vapor deposition. The boron composition was studied by x-ray diffraction (XRD), secondary neutral mass spectrometry (SNMS), and Rutherford backscattering spectrometry (RBS). The XRD 2h scan exhibited the clear wurtzite BAlN peak 1.82 larger than the AlN peak, indicating the boron composition of 30.9% based on the lattice constants of wurtzite AlN and BN. The SNMS and RBS experiments, independent of strain and defects, revealed that the boron content was 22%. The microstructures of the wurtzite BAlN film were further studied by transmission electron microscopy, showing an initial 5 nm thick layer free of crystal twinning followed by widespread crystal twinning with lattice rotations of 60 clockwise and anti-clockwise. The optical transmission experiment manifested that the bandgap of the smaller-lattice BAlN film was 5.1 eV, smaller than that of larger-lattice AlN. This trend was the opposite of the conventional InGaAlN but consistent with theoretical predictions. This study would greatly facilitate the research of material, physics, and devices incorporating the wurtzite BAlN alloys.
dc.publisherAIP Publishing
dc.relation.urlhttp://aip.scitation.org/doi/10.1063/5.0019881
dc.rightsPublished under license by AIP Publishing
dc.rights.urilicense by AIP Publishing
dc.titleDemonstration of single-phase wurtzite BAlN with over 20% boron content by metalorganic chemical vapor deposition
dc.typeArticle
dc.contributor.departmentAdvanced Semiconductor Laboratory
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalApplied Physics Letters
dc.eprint.versionPublisher's Version/PDF
dc.identifier.volume117
dc.identifier.issue8
dc.identifier.pages082102
kaust.personTran, Tinh Binh
kaust.personLiao, Che-Hao
kaust.personAlqatari, Feras
kaust.personLi, Xiaohang
dc.date.accepted2020-08-27
refterms.dateFOA2020-09-06T07:50:26Z
dc.date.published-online2020-08-27
dc.date.published-print2020-08-24


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