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    Demonstration of single-phase wurtzite BAlN with over 20% boron content by metalorganic chemical vapor deposition

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    Type
    Article
    Authors
    Tran, Tinh Binh cc
    Liao, Che-Hao cc
    AlQatari, Feras S. cc
    Li, Xiaohang cc
    KAUST Department
    Advanced Semiconductor Laboratory
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2020-08-27
    Online Publication Date
    2020-08-27
    Print Publication Date
    2020-08-24
    Submitted Date
    2020-06-26
    Permanent link to this record
    http://hdl.handle.net/10754/664931
    
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    Abstract
    Wurtzite BAlN alloys are emerging ultrawide bandgap III-nitride semiconductors promising for optical and electronic devices. Yet the boron compositions of the grown alloys have been limited. In this Letter, we report on the demonstration of a thick single-phase wurtzite BAlN film with a boron composition over 20%. The growth was conducted at 1010 C and 150 Torr with continuous flows of group-III precursors and ammonia with a growth rate of 2.2 lm/h by metalorganic chemical vapor deposition. The boron composition was studied by x-ray diffraction (XRD), secondary neutral mass spectrometry (SNMS), and Rutherford backscattering spectrometry (RBS). The XRD 2h scan exhibited the clear wurtzite BAlN peak 1.82 larger than the AlN peak, indicating the boron composition of 30.9% based on the lattice constants of wurtzite AlN and BN. The SNMS and RBS experiments, independent of strain and defects, revealed that the boron content was 22%. The microstructures of the wurtzite BAlN film were further studied by transmission electron microscopy, showing an initial 5 nm thick layer free of crystal twinning followed by widespread crystal twinning with lattice rotations of 60 clockwise and anti-clockwise. The optical transmission experiment manifested that the bandgap of the smaller-lattice BAlN film was 5.1 eV, smaller than that of larger-lattice AlN. This trend was the opposite of the conventional InGaAlN but consistent with theoretical predictions. This study would greatly facilitate the research of material, physics, and devices incorporating the wurtzite BAlN alloys.
    Citation
    Tran, T. B., Liao, C.-H., AlQatari, F., & Li, X. (2020). Demonstration of single-phase wurtzite BAlN with over 20% boron content by metalorganic chemical vapor deposition. Applied Physics Letters, 117(8), 082102. doi:10.1063/5.0019881
    Publisher
    AIP Publishing
    Journal
    Applied Physics Letters
    DOI
    10.1063/5.0019881
    Additional Links
    http://aip.scitation.org/doi/10.1063/5.0019881
    ae974a485f413a2113503eed53cd6c53
    10.1063/5.0019881
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Electrical and Computer Engineering Program; Material Science and Engineering Program; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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