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dc.contributor.authorSubedi, Ram Chandra
dc.contributor.authorMin, Jungwook
dc.contributor.authorMitra, Somak
dc.contributor.authorLi, Kuang-Hui
dc.contributor.authorAjia, Idris A.
dc.contributor.authorStegenburgs, Edgars
dc.contributor.authorAnjum, Dalaver H.
dc.contributor.authorConroy, Michele (Shelly)
dc.contributor.authorMoore, Kalani
dc.contributor.authorBangert, Ursel
dc.contributor.authorRoqan, Iman S.
dc.contributor.authorNg, Tien Khee
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2020-09-06T06:51:44Z
dc.date.available2020-09-06T06:51:44Z
dc.date.issued2020-09-01
dc.date.submitted2020-02-19
dc.identifier.citationSubedi, R. C., Min, J.-W., Mitra, S., Li, K.-H., Ajia, I., Stegenburgs, E., … Ooi, B. S. (2020). Quantifying the Transverse-Electric-Dominant 260 nm Emission from Molecular Beam Epitaxy-Grown GaN-Quantum-Disks Embedded in AlN Nanowires: A Comprehensive Optical and Morphological Characterization. ACS Applied Materials & Interfaces, 12(37), 41649–41658. doi:10.1021/acsami.0c03259
dc.identifier.issn1944-8244
dc.identifier.issn1944-8252
dc.identifier.pmid32869977
dc.identifier.doi10.1021/acsami.0c03259
dc.identifier.urihttp://hdl.handle.net/10754/664929
dc.description.abstractThere has been a relentless pursuit of transverse electric (TE)-dominant deep ultraviolet (UV) optoelectronic devices for efficient surface emitters to replace the environmentally unfriendly mercury lamps. To date, the use of the ternary AlGaN alloy inevitably has led to transverse magnetic (TM)-dominant emission, an approach that is facing a roadblock. Here, we take an entirely different approach of utilizing a binary GaN compound semiconductor in conjunction with ultrathin quantum disks (QDisks) embedded in AlN nanowires (NWs). The growth of GaN QDisks is realized on a scalable and low-cost Si substrate using plasma-assisted molecular beam epitaxy as a highly controllable monolayer growth platform. We estimated an internal quantum efficiency of ∼81% in a wavelength regime of ∼260 nm for these nanostructures. Additionally, strain mapping obtained by high-angle annular dark-field scanning transmission electron microscopy is studied in conjunction with the TE and TM modes of the carrier recombination. Moreover, for the first time, we quantify the TE and TM modes of the PL emitted by GaN QDisks for deep-UV emitters. We observed nearly pure TE-polarized photoluminescence emission at a polarization angle of ∼5°. This work proposes highly quantum-confined ultrathin GaN QDisks as a promising candidate for deep-UV vertical emitters.
dc.description.sponsorshipWe acknowledge the financial support from the King Abdulaziz City for Science and Technology (KACST) under grant no. KACST TIC R2-FP 008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding no. BAS/1/1614-01-01 and MBE equipment funding no. C/M-20000-12-001-77 and KCR/1/4055-01-01.
dc.publisherAmerican Chemical Society (ACS)
dc.rightsAccepted manuscript archived with thanks to ACS
dc.titleQuantifying the Transverse-Electric-Dominant 260 nm Emission from Molecular Beam Epitaxy-Grown GaN-Quantum-Disks Embedded in AlN Nanowires: A Comprehensive Optical and Morphological Characterization
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentElectron Microscopy
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentMaterial Science and Engineering
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhotonics Laboratory
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentSemiconductor and Material Spectroscopy (SMS) Laboratory
dc.identifier.journalACS Applied Materials & Interfaces
dc.rights.embargodate2021-08-18
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Physics, Bernal Institute, University of Limerick, Limerick V94 T9PX, Ireland
kaust.personSubedi, Ram
kaust.personMin, Jung-Wook
kaust.personMitra, Somak
kaust.personLi, Kuang-Hui
kaust.personAjia, Idris A.
kaust.personStegenburgs, Edgars
kaust.personAnjum, Dalaver H.
kaust.personRoqan, Iman S.
kaust.personNg, Tien Khee
kaust.personOoi, Boon S.
kaust.grant.numberBAS/1/1614-01-01
kaust.grant.numberC/M-20000-12-001-77
dc.date.accepted2020-08-18
refterms.dateFOA2020-09-06T06:53:29Z
dc.date.published-online2020-09-01
dc.date.published-print2020-09-16


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