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    Quantifying the Transverse-Electric-Dominant 260 nm Emission from Molecular Beam Epitaxy-Grown GaN-Quantum-Disks Embedded in AlN Nanowires: A Comprehensive Optical and Morphological Characterization

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    Type
    Article
    Authors
    Subedi, Ram Chandra cc
    Min, Jungwook cc
    Mitra, Somak cc
    Li, Kuang-Hui cc
    Ajia, Idris A. cc
    Stegenburgs, Edgars cc
    Anjum, Dalaver H. cc
    Conroy, Michele (Shelly) cc
    Moore, Kalani cc
    Bangert, Ursel
    Roqan, Iman S. cc
    Ng, Tien Khee cc
    Ooi, Boon S. cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering
    Electrical Engineering Program
    Electron Microscopy
    Imaging and Characterization Core Lab
    Material Science and Engineering
    Material Science and Engineering Program
    Photonics Laboratory
    Physical Science and Engineering (PSE) Division
    Semiconductor and Material Spectroscopy (SMS) Laboratory
    KAUST Grant Number
    BAS/1/1614-01-01
    C/M-20000-12-001-77
    Date
    2020-09-01
    Online Publication Date
    2020-09-01
    Print Publication Date
    2020-09-16
    Embargo End Date
    2021-08-18
    Submitted Date
    2020-02-19
    Permanent link to this record
    http://hdl.handle.net/10754/664929
    
    Metadata
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    Abstract
    There has been a relentless pursuit of transverse electric (TE)-dominant deep ultraviolet (UV) optoelectronic devices for efficient surface emitters to replace the environmentally unfriendly mercury lamps. To date, the use of the ternary AlGaN alloy inevitably has led to transverse magnetic (TM)-dominant emission, an approach that is facing a roadblock. Here, we take an entirely different approach of utilizing a binary GaN compound semiconductor in conjunction with ultrathin quantum disks (QDisks) embedded in AlN nanowires (NWs). The growth of GaN QDisks is realized on a scalable and low-cost Si substrate using plasma-assisted molecular beam epitaxy as a highly controllable monolayer growth platform. We estimated an internal quantum efficiency of ∼81% in a wavelength regime of ∼260 nm for these nanostructures. Additionally, strain mapping obtained by high-angle annular dark-field scanning transmission electron microscopy is studied in conjunction with the TE and TM modes of the carrier recombination. Moreover, for the first time, we quantify the TE and TM modes of the PL emitted by GaN QDisks for deep-UV emitters. We observed nearly pure TE-polarized photoluminescence emission at a polarization angle of ∼5°. This work proposes highly quantum-confined ultrathin GaN QDisks as a promising candidate for deep-UV vertical emitters.
    Citation
    Subedi, R. C., Min, J.-W., Mitra, S., Li, K.-H., Ajia, I., Stegenburgs, E., … Ooi, B. S. (2020). Quantifying the Transverse-Electric-Dominant 260 nm Emission from Molecular Beam Epitaxy-Grown GaN-Quantum-Disks Embedded in AlN Nanowires: A Comprehensive Optical and Morphological Characterization. ACS Applied Materials & Interfaces, 12(37), 41649–41658. doi:10.1021/acsami.0c03259
    Sponsors
    We acknowledge the financial support from the King Abdulaziz City for Science and Technology (KACST) under grant no. KACST TIC R2-FP 008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding no. BAS/1/1614-01-01 and MBE equipment funding no. C/M-20000-12-001-77 and KCR/1/4055-01-01.
    Publisher
    American Chemical Society (ACS)
    Journal
    ACS Applied Materials & Interfaces
    DOI
    10.1021/acsami.0c03259
    PubMed ID
    32869977
    ae974a485f413a2113503eed53cd6c53
    10.1021/acsami.0c03259
    Scopus Count
    Collections
    Articles; Imaging and Characterization Core Lab; Physical Science and Engineering (PSE) Division; Electrical and Computer Engineering Program; Material Science and Engineering Program; Photonics Laboratory; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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