Quantifying the Transverse-Electric-Dominant 260 nm Emission from Molecular Beam Epitaxy-Grown GaN-Quantum-Disks Embedded in AlN Nanowires: A Comprehensive Optical and Morphological Characterization
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Subedi, Ram Chandra
Min, Jungwook

Mitra, Somak

Li, Kuang-Hui

Ajia, Idris A.

Stegenburgs, Edgars

Anjum, Dalaver H.

Conroy, Michele (Shelly)

Moore, Kalani

Bangert, Ursel
Roqan, Iman S.

Ng, Tien Khee

Ooi, Boon S.

KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering
Electrical Engineering Program
Electron Microscopy
Imaging and Characterization Core Lab
Material Science and Engineering
Material Science and Engineering Program
Photonics Laboratory
Physical Science and Engineering (PSE) Division
Semiconductor and Material Spectroscopy (SMS) Laboratory
KAUST Grant Number
BAS/1/1614-01-01C/M-20000-12-001-77
Date
2020-09-01Online Publication Date
2020-09-01Print Publication Date
2020-09-16Embargo End Date
2021-08-18Submitted Date
2020-02-19Permanent link to this record
http://hdl.handle.net/10754/664929
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Show full item recordAbstract
There has been a relentless pursuit of transverse electric (TE)-dominant deep ultraviolet (UV) optoelectronic devices for efficient surface emitters to replace the environmentally unfriendly mercury lamps. To date, the use of the ternary AlGaN alloy inevitably has led to transverse magnetic (TM)-dominant emission, an approach that is facing a roadblock. Here, we take an entirely different approach of utilizing a binary GaN compound semiconductor in conjunction with ultrathin quantum disks (QDisks) embedded in AlN nanowires (NWs). The growth of GaN QDisks is realized on a scalable and low-cost Si substrate using plasma-assisted molecular beam epitaxy as a highly controllable monolayer growth platform. We estimated an internal quantum efficiency of ∼81% in a wavelength regime of ∼260 nm for these nanostructures. Additionally, strain mapping obtained by high-angle annular dark-field scanning transmission electron microscopy is studied in conjunction with the TE and TM modes of the carrier recombination. Moreover, for the first time, we quantify the TE and TM modes of the PL emitted by GaN QDisks for deep-UV emitters. We observed nearly pure TE-polarized photoluminescence emission at a polarization angle of ∼5°. This work proposes highly quantum-confined ultrathin GaN QDisks as a promising candidate for deep-UV vertical emitters.Citation
Subedi, R. C., Min, J.-W., Mitra, S., Li, K.-H., Ajia, I., Stegenburgs, E., … Ooi, B. S. (2020). Quantifying the Transverse-Electric-Dominant 260 nm Emission from Molecular Beam Epitaxy-Grown GaN-Quantum-Disks Embedded in AlN Nanowires: A Comprehensive Optical and Morphological Characterization. ACS Applied Materials & Interfaces, 12(37), 41649–41658. doi:10.1021/acsami.0c03259Sponsors
We acknowledge the financial support from the King Abdulaziz City for Science and Technology (KACST) under grant no. KACST TIC R2-FP 008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding no. BAS/1/1614-01-01 and MBE equipment funding no. C/M-20000-12-001-77 and KCR/1/4055-01-01.Publisher
American Chemical Society (ACS)PubMed ID
32869977ae974a485f413a2113503eed53cd6c53
10.1021/acsami.0c03259
Scopus Count
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