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1.5-Gbit/s Filter-free Optical Communication Link based on Wavelength-selective Semipolar ($20\overline{21}$) InGaN/GaN Micro-photodetector

dc.contributor.authorKang, Chun Hong
dc.contributor.authorLiu, Guangyu
dc.contributor.authorLee, Changmin
dc.contributor.authorAlkhazragi, Omar
dc.contributor.authorWagstaff, Jonathan M.
dc.contributor.authorLi, Kuang-Hui
dc.contributor.authorAlhawaj, Fatimah
dc.contributor.authorNg, Tien Khee
dc.contributor.authorSpeck, James S.
dc.contributor.authorNakamura, Shuji
dc.contributor.authorDenBaars, Steven P.
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2020-09-01T03:41:54Z
dc.date.available2020-09-01T03:41:54Z
dc.date.issued2020-09-14
dc.identifier.citationKang, C. H., Liu, G., Lee, C., Alkhazragi, O., Wagstaff, J. M., Li, K.-H., … Ooi, B. S. (2020). 1.5-Gbit/s Filter-free Optical Communication Link based on Wavelength-selective Semipolar ( 20 21 ¯ ) InGaN/GaN Micro-photodetector. Conference on Lasers and Electro-Optics. doi:10.1364/cleo_si.2020.sm3r.5
dc.identifier.doi10.1364/CLEO_SI.2020.SM3R.5
dc.identifier.urihttp://hdl.handle.net/10754/664911
dc.description.abstractWe report on wavelength-selective semipolar (2021) InGaN/GaN micro-photodetector with broad modulation bandwidth of 293.52 MHz, outperforming polar-based devices. A 1.5-Gbit/s data rate was achieved without the need of spectral-efficient modulation format.
dc.description.sponsorshipAuthors gratefully acknowledge funding from King Abdullah University of Science and Technology (KAUST) (BAS/1/1614-01-01, REP/1/2878-01-01 and KCR/1/2081-01-01), and King Abdulaziz City for Science and Technology (KACST) R2-FP-008. KAUST Imaging and Characterisation, and Nanofabrication Core Laboratories at KAUST.
dc.publisherThe Optical Society
dc.relation.urlhttps://www.osapublishing.org/abstract.cfm?uri=CLEO_SI-2020-SM3R.5#Abstract
dc.relation.urlhttps://ieeexplore.ieee.org/document/9192039/
dc.rightsArchived with thanks to OSA Technical Digest
dc.title1.5-Gbit/s Filter-free Optical Communication Link based on Wavelength-selective Semipolar ($20\overline{21}$) InGaN/GaN Micro-photodetector
dc.typeConference Paper
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentMaterial Science and Engineering
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhotonics Laboratory
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.conference.date10–15 May 2020
dc.conference.nameConference on Lasers and Electro-Optics
dc.conference.locationSan Jose, CA
dc.eprint.versionPost-print
dc.contributor.institutionMaterials Department, University of California Santa Barbara (UCSB), Santa Barbara, CA 93106, U.S.A.
pubs.publication-statusPublished
kaust.personKang, Chun Hong
kaust.personLiu, Guangyu
kaust.personLee, Changmin
kaust.personAlkhazragi, Omar
kaust.personWagstaff, Jonathan M.
kaust.personLi, Kuang-Hui
kaust.personAlhawaj, Fatimah
kaust.personNg, Tien Khee
kaust.personOoi, Boon S.
kaust.grant.numberBAS/1/1614-01-01
kaust.grant.numberKCR/1/2081-01-01
kaust.grant.numberREP/1/2878-01-01
refterms.dateFOA2020-09-01T03:41:55Z
kaust.acknowledged.supportUnitKAUST Imaging and Characterisation Core Laboratory
kaust.acknowledged.supportUnitNanofabrication Core Laboratory at KAUST
dc.date.published-online2020-09-14
dc.date.published-print2020


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