Mobility-Fluctuation-Controlled Linear Positive Magnetoresistance in 2D Semiconductor Bi2O2Se Nanoplates

Abstract

Linear magnetoresistance is generally observed in polycrystalline zero-gap semimetals and polycrystalline Dirac semimetals with ultrahigh carrier mobility. We report the observation of positive and linear magnetoresistance in a single-crystalline semiconductor Bi2O2Se grown by chemical vapor deposition. Both Se-poor and Se-rich Bi2O2Se single-crystalline nanoplates display a linear magnetoresistance at high fields. The Se-poor Bi2O2Se exhibits a typical 2D conduction feature with a small effective mass of 0.032m0. The average transport Hall mobility, which is lower than 5500 cm2 V–1 s–1, is significantly reduced, compared with the ultrahigh quantum mobility as high as 16260 cm2 V–1 s–1. More interestingly, the pronounced Shubnikov–de Hass oscillations can be clearly observed from the very large and nearly linear magnetoresistance (>500% at 14 T and 2 K) in Se-poor Bi2O2Se. A close analysis of the results reveals that the large and linear magnetoresistance observed can be ascribed to the spatial mobility fluctuation, which is strongly supported by Fermi energy inhomogeneity in the nanoplate samples detected using an electrostatic force microscopy images and multiple frequencies in a Shubnikov–de Hass oscillation. On the contrary, the Se-rich Bi2O2Se exhibits a transport mobility (<300 cm2 V–1 s–1) much smaller than that observed in Se-poor samples and shows a much smaller linear magnetoresistance ratio (less than 150% at 14 T and 2 K). More strikingly, no Shubnikov–de Hass oscillations can be observed. Therefore, the linear magnetoresistance in Se-rich Bi2O2Se is governed by the average mobility rather than the mobility fluctuation.