Design Exploration of Sensing Techniques in 2T-2R Resistive Ternary CAMs
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AbstractIn-Memory Computing (IMC) is considered a great candidate to replace von-Neumann computing architecture to overcome the memory wall. Ternary content-addressable memories are the main building blocks in IMC-based architectures, such as the associative processors. In this paper, we present a juxtaposition between the capacitive and resistive sensing in 2T-2R TCAMs. A Figure of Merit, function of the dynamic range, latency, and energy, is defined to have a fair comparison between the two sensing techniques. A mathematical model for the transient behavior of both sensing schemes has been derived and verified through SPICE simulations. We studied the performance with an in-memory addition application. Results from various scenarios show that the resistive sensing outperforms the capacitive one in both theoretical and application-based contexts.
CitationRakka, M., Fouda, M. E., Kanj, R., Eltawil, A., & Kurdahi, F. J. (2020). Design Exploration of Sensing Techniques in 2T-2R Resistive Ternary CAMs. IEEE Transactions on Circuits and Systems II: Express Briefs, 1–1. doi:10.1109/tcsii.2020.3017477