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    Subquantum-Well Influence on Carrier Dynamics in High Efficiency DUV Dislocation-Free AlGaN/AlGaN-Based Multiple Quantum Wells

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    Type
    Article
    Authors
    Ajia, Idris A. cc
    Almalawi, Dhiafallah
    Lu, Yi cc
    Lopatin, Sergei cc
    Li, Xiaohang cc
    Liu, Zhiqiang cc
    Roqan, Iman S. cc
    KAUST Department
    Advanced Semiconductor Laboratory
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering
    Electrical Engineering Program
    Electron Microscopy
    King Abdullah University of Science and Technology (KAUST), †Physical Science and Engineering (PSE) Division, §Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, and -1Imaging and Characterization Core Laboratory, Thuwal, Saudi Arabia
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Semiconductor and Material Spectroscopy (SMS) Laboratory
    KAUST Grant Number
    BAS/1/1319-01-01
    Date
    2020-05-26
    Online Publication Date
    2020-05-26
    Print Publication Date
    2020-07-15
    Submitted Date
    2019-12-23
    Permanent link to this record
    http://hdl.handle.net/10754/664639
    
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    Abstract
    We explore the effect of the subwell centers and related carrier dynamics mechanisms in dislocation-free DUV AlGaN/AlGaN multiple quantum wells (MQWs) homoepitaxially grown on an AlN substrate. Cross-sectional imaging and energy-dispersive X-ray compositional analyses using scanning transmission electron microscopy (STEM) reveal epitaxial layers of very high crystalline quality, as well as ultrathin Al-rich subquantum barrier and subwell layers at the interface between the wells and the barriers. Carrier dynamic analyses studied by power- A nd temperature-dependent time-resolved and time-integrated photoluminescence (PL) and PL excitation measurements, as well as numerical simulations, reveal the carrier repopulation mechanisms between the MQWs and subwell sites. This advanced analysis shows that the subwell/sub-barrier structure results in additional exciton localization centers, enhancing the internal quantum efficiency via staggered carrier repopulation into the MQWs to reach a maximum of -83% internal quantum efficiency, which remains high at high injected carrier densities in the droop region. Both experimental and numerical simulation results show that the slight efficiency droop can be due to Auger recombination, counteracted by a simultaneous increase in radiative recombination processes at high power density, demonstrating the role of the subwells/sub-barriers in efficiency enhancement.
    Citation
    Ajia, I. A., Almalawi, D., Lu, Y., Lopatin, S., Li, X., Liu, Z., & Roqan, I. S. (2020). Subquantum-Well Influence on Carrier Dynamics in High Efficiency DUV Dislocation-Free AlGaN/AlGaN-Based Multiple Quantum Wells. ACS Photonics, 7(7), 1667–1675. doi:10.1021/acsphotonics.9b01814
    Sponsors
    The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST), using the base funding (BAS/1/1319-01-01).
    Publisher
    American Chemical Society (ACS)
    Journal
    ACS Photonics
    DOI
    10.1021/acsphotonics.9b01814
    Additional Links
    https://pubs.acs.org/doi/10.1021/acsphotonics.9b01814
    ae974a485f413a2113503eed53cd6c53
    10.1021/acsphotonics.9b01814
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Electrical and Computer Engineering Program; Material Science and Engineering Program; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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