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Resonant energy transfer between hexagonal boron nitride quantum emitters and atomically layered transition metal dichalcogenides

dc.contributor.authorLi, Chi
dc.contributor.authorXu, Zai Quan
dc.contributor.authorMendelson, Noah
dc.contributor.authorKianinia, Mehran
dc.contributor.authorWan, Yi
dc.contributor.authorToth, Milos
dc.contributor.authorAharonovich, Igor
dc.contributor.authorBradac, Carlo
dc.date.accessioned2020-08-16T07:57:16Z
dc.date.available2020-08-16T07:57:16Z
dc.date.issued2020-07-27
dc.date.submitted2020-05-18
dc.identifier.citationLi, C., Xu, Z.-Q., Mendelson, N., Kianinia, M., Wan, Y., Toth, M., … Bradac, C. (2020). Resonant energy transfer between hexagonal boron nitride quantum emitters and atomically layered transition metal dichalcogenides. 2D Materials, 7(4), 045015. doi:10.1088/2053-1583/aba332
dc.identifier.issn2053-1583
dc.identifier.doi10.1088/2053-1583/aba332
dc.identifier.urihttp://hdl.handle.net/10754/664593
dc.description.abstractVan der Waals heterostructures offer a unique platform to investigate light matter interaction at the nanoscale. In this work, we explore resonant energy transfer processes between van der Waals materials from two fundamentally different systems: single-photon emitters in two-dimensional hexagonal boron nitride and excitons in transition metal dichalcogenide monolayers. We study the photodynamics between these two systems by performing time-resolved fluorescence spectroscopy. Our results show that colour centres in hexagonal boron nitride do interact with transition metal dichalcogenide excitons and provide important insights into harnessing these interactions in van der Waals heterostructures for advanced nanophotonic devices.
dc.description.sponsorshipWe thank H Duong, Y Chen, Thinh Tran for assistance with the transfer process, J Fröch and T T Tran for their useful discussions on making 2D monolayers, and W Ma and Y Lu from Australian National University, for their kind guidance on monolayer exfoliation. The financial support from the Australian Research Council via DP180100077, DE180100810, DP190101058 is gratefully acknowledged.
dc.publisherIOP Publishing
dc.relation.urlhttps://iopscience.iop.org/article/10.1088/2053-1583/aba332
dc.rightsThis is an author-created, un-copyedited version of an article accepted for publication/published in 2D Materials. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://doi.org/10.1088/2053-1583/aba332
dc.titleResonant energy transfer between hexagonal boron nitride quantum emitters and atomically layered transition metal dichalcogenides
dc.typeArticle
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentMaterial Science and Engineering
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journal2D Materials
dc.eprint.versionPost-print
dc.contributor.institutionSchool of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
dc.contributor.institutionARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
dc.contributor.institutionDepartment of Physics & Astronomy, Trent University, 1600 West Bank Dr., Peterborough ON, K9J 0G2, Canada
dc.identifier.volume7
dc.identifier.issue4
dc.identifier.pages045015
kaust.personWan, Yi
dc.date.accepted2020-07-06
dc.identifier.eid2-s2.0-85089025787


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