Resonant energy transfer between hexagonal boron nitride quantum emitters and atomically layered transition metal dichalcogenides
Xu, Zai Quan
KAUST DepartmentMaterial Science and Engineering Program
Material Science and Engineering
Physical Science and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/664593
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AbstractVan der Waals heterostructures offer a unique platform to investigate light matter interaction at the nanoscale. In this work, we explore resonant energy transfer processes between van der Waals materials from two fundamentally different systems: single-photon emitters in two-dimensional hexagonal boron nitride and excitons in transition metal dichalcogenide monolayers. We study the photodynamics between these two systems by performing time-resolved fluorescence spectroscopy. Our results show that colour centres in hexagonal boron nitride do interact with transition metal dichalcogenide excitons and provide important insights into harnessing these interactions in van der Waals heterostructures for advanced nanophotonic devices.
CitationLi, C., Xu, Z.-Q., Mendelson, N., Kianinia, M., Wan, Y., Toth, M., … Bradac, C. (2020). Resonant energy transfer between hexagonal boron nitride quantum emitters and atomically layered transition metal dichalcogenides. 2D Materials, 7(4), 045015. doi:10.1088/2053-1583/aba332
SponsorsWe thank H Duong, Y Chen, Thinh Tran for assistance with the transfer process, J Fröch and T T Tran for their useful discussions on making 2D monolayers, and W Ma and Y Lu from Australian National University, for their kind guidance on monolayer exfoliation. The financial support from the Australian Research Council via DP180100077, DE180100810, DP190101058 is gratefully acknowledged.